Recent Progress on High‐Capacitance Polymer Gate Dielectrics for Flexible Low‐Voltage Transistors

Benjamin Nketia‐Yawson; Yong‐Young Noh

doi:10.1002/adfm.201802201

journal article Sep 02, 2018

Recent Progress on High‐Capacitance Polymer Gate Dielectrics for Flexible Low‐Voltage Transistors

Benjamin Nketia‐Yawson Yong‐Young Noh

Advanced Functional Materials Vol. 28 No. 42 · Wiley

View at Publisher Save 10.1002/adfm.201802201

Abstract

AbstractThe gate dielectric layer is an essential element of field‐effect transistors (FETs), large area integrated circuits, and various application electronics. Beyond basic insulation between the semiconductor layer and gate electrode, FET performance largely depends on the capacitance of the chosen insulator layer properties. Recent functional devices developments require new functionalities, such as high mechanical flexibility and stretchability in addition to basic insulating and physical properties. This review focuses on recent developments of high‐capacitance polymer gate dielectric materials and their application for low‐voltage flexible FETs. The fundamental principles and components of transistors are discussed briefly, then the underlying concepts for gate dielectrics and the mechanisms for polymer dielectric properties, such as capacitance control, leakage current formation in dielectric polymer films, and patternability, are described. Strategic approaches to achieve high capacitance based on low‐k dielectric materials, and the development and use of high‐capacitance polymers and hybrid polymer gate dielectrics in the context of emerging transistors on flexible substrates are also discussed.

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Metrics

191

Citations

215

References

Details

Published: Sep 02, 2018
Vol/Issue: 28(42)
License: View

Authors

B

Benjamin Nketia‐Yawson

Department of Energy and Materials Engineering Dongguk University 30 Pildong‐ro, 1‐gil Jung‐gu Seoul 04620 Republic of Korea

Y

Yong‐Young Noh

Department of Energy and Materials Engineering Dongguk University 30 Pildong‐ro, 1‐gil Jung‐gu Seoul 04620 Republic of Korea

Funding

National Research Foundation of Korea Award: 2017R1E1A1A01075360

Ministry of Science ICT and Future Planning

Cite This Article

Benjamin Nketia‐Yawson, Yong‐Young Noh (2018). Recent Progress on High‐Capacitance Polymer Gate Dielectrics for Flexible Low‐Voltage Transistors. Advanced Functional Materials, 28(42). https://doi.org/10.1002/adfm.201802201

Recent Progress on High‐Capacitance Polymer Gate Dielectrics for Flexible Low‐Voltage Transistors

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