A Synaptic Transistor based on Quasi‐2D Molybdenum Oxide

Chuan Sen Yang; Da Shan Shang; Nan Liu; Gang Shi; Xi Shen; Ri Cheng Yu; Yong Qing Li; Young Sun

doi:10.1002/adma.201700906

journal article May 09, 2017

A Synaptic Transistor based on Quasi‐2D Molybdenum Oxide

Chuan Sen Yang Da Shan Shang Nan Liu

Gang Shi

Xi Shen

Ri Cheng Yu Yong Qing Li Young Sun

Advanced Materials Vol. 29 No. 27 · Wiley

View at Publisher Save 10.1002/adma.201700906

Abstract

Biological synapses store and process information simultaneously by tuning the connection between two neighboring neurons. Such functionality inspires the task of hardware implementation of neuromorphic computing systems. Ionic/electronic hybrid three‐terminal memristive devices, in which the channel conductance can be modulated according to the history of applied voltage and current, provide a more promising way of emulating synapses by a substantial reduction in complexity and energy consumption. 2D van der Waals materials with single or few layers of crystal unit cells have been a widespread innovation in three‐terminal electronic devices. However, less attention has been paid to 2D transition‐metal oxides, which have good stability and technique compatibility. Here, nanoscale three‐terminal memristive transistors based on quasi‐2D α‐phase molybdenum oxide (α‐MoO3) to emulate biological synapses are presented. The essential synaptic behaviors, such as excitatory postsynaptic current, depression and potentiation of synaptic weight, and paired‐pulse facilitation, as well as the transition of short‐term plasticity to long‐term potentiation, are demonstrated in the three‐terminal devices. These results provide an insight into the potential application of 2D transition‐metal oxides for synaptic devices with high scaling ability, low energy consumption, and high processing efficiency.

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References

66

[1]

10.1126/science.1067020

[2]

10.1152/jn.1999.81.2.781

[3]

10.1073/pnas.152343099

[4]

10.1039/c2ra22507g

[5]

10.1088/0957-4484/24/38/382001

[6]

10.1109/tnn.2005.860850

[7]

10.1109/tcsi.2010.2089556

[8]

10.1162/089976600300014917

[9]

Memristor-The missing circuit element

L. Chua

IEEE Transactions on Circuit Theory 10.1109/tct.1971.1083337

[10]

The missing memristor found

Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart et al.

Nature 10.1038/nature06932

[11]

10.1038/nnano.2012.240

[12]

Synaptic Metaplasticity Realized in Oxide Memristive Devices

Zheng‐Hua Tan, Rui Yang, Kazuya Terabe et al.

Advanced Materials 10.1002/adma.201503575

[13]

10.1002/adma.200903680

[14]

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

Sung Hyun Jo, Ting Chang, Idongesit Ebong et al.

Nano Letters 10.1021/nl904092h

[15]

10.1021/nl201040y

[16]

10.1038/nmat4756

[17]

10.1038/ncomms12611

[18]

10.1038/srep18639

[19]

Stochastic phase-change neurons

Tomas Tuma, Angeliki Pantazi, Manuel Le Gallo et al.

Nature Nanotechnology 10.1038/nnano.2016.70

[20]

10.1039/c6cp06004h

[21]

Phillai P. B. ACS. Appl. Mater. Interfaces (2007)

[22]

10.1038/ncomms3676

[23]

10.1038/ncomms4158

[24]

10.1002/adma.201502719

[25]

10.1002/adfm.201101935

[26]

Electric Field Effect in Atomically Thin Carbon Films

K. S. Novoselov, A. K. Geim, S. V. Morozov et al.

Science 10.1126/science.1102896

[27]

Single-layer MoS2 transistors

B. Radisavljevic, A. Radenovic, J. Brivio et al.

Nature Nanotechnology 10.1038/nnano.2010.279

[28]

Single-Layer MoS2Phototransistors

Zongyou Yin, Hai Li, Hong Li et al.

ACS Nano 10.1021/nn2024557

[29]

10.1038/nnano.2012.95

[30]

10.1021/nl500666m

[31]

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

Qing Hua Wang, Kourosh Kalantar-Zadeh, Andras Kis et al.

Nature Nanotechnology 10.1038/nnano.2012.193

[32]

10.1038/ncomms6678

[33]

10.1002/adfm.201503698

[34]

10.1021/jp5038415

[35]

10.1016/j.snb.2009.11.007

[36]

10.1021/nn403241f

[37]

10.1021/acsnano.5b00336

[38]

10.1021/nl203649p

[39]

10.1021/cm500271u

[40]

10.1002/adma.200501915

[41]

10.1038/srep04891

[42]

10.1063/1.4906110

[43]

10.1039/b9nr00320g

[44]

10.1038/nmat2298

[45]

10.1038/nmat2587

[46]

10.1126/science.1230512

[47]

10.1002/adfm.201101846

[48]

10.1021/nn4026614

[49]

10.1002/adma.201502574

[50]

10.1063/1.4823851

Showing 50 of 66 references

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Details

Published: May 09, 2017
Vol/Issue: 29(27)
License: View

Authors

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Chuan Sen Yang