Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge States

Illia Serhiienko; Andrei Novitskii; Fabian Garmroudi; Evgeny Kolesnikov; Evgenia Chernyshova; Tatyana Sviridova; Aleksei Bogach; Andrei Voronin; Hieu Duy Nguyen; Naoyuki Kawamoto; Ernst Bauer; Vladimir Khovaylo; Takao MORI

doi:10.1002/advs.202309291

journal article Open Access May 05, 2024

Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge States

Illia Serhiienko

Andrei Novitskii Fabian Garmroudi

Evgeny Kolesnikov Evgenia Chernyshova Tatyana Sviridova Aleksei Bogach Andrei Voronin Hieu Duy Nguyen Naoyuki Kawamoto Ernst Bauer Vladimir Khovaylo Takao MORI

Advanced Science Vol. 11 No. 26 · Wiley

View at Publisher Save 10.1002/advs.202309291

Abstract

AbstractOxides are of interest for thermoelectrics due to their high thermal stability, chemical inertness, low cost, and eco‐friendly constituting elements. Here, adopting a unique synthesis route via chemical co‐precipitation at strongly alkaline conditions, one of the highest thermoelectric performances for ZnO ceramics ( 21.5 µW cm−1 K−2 and 0.5 at 1100 K in ) is achieved. These results are linked to a distinct modification of the electronic structure: charge carriers become trapped at the edge of the conduction band due to Anderson localization, evidenced by an anomalously low carrier mobility, and characteristic temperature and doping dependencies of charge transport. The bi‐dimensional optimization of doping and carrier localization enable a simultaneous improvement of the Seebeck coefficient and electrical conductivity, opening a novel pathway to advance ZnO thermoelectrics.

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Details

Published: May 05, 2024
Vol/Issue: 11(26)
License: View

Authors

I

Illia Serhiienko

WPI‐MANA, National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 Japan; Graduate School of Pure and Applied Sciences University of Tsukuba Tsukuba Ibaraki 305‐8573 Japan

A

Andrei Novitskii

WPI‐MANA, National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 Japan

F

Fabian Garmroudi

Institute of Solid State Physics TU Wien Vienna A‐1040 Austria

E

Evgeny Kolesnikov

National University of Science and Technology MISIS Moscow 119049 Russia

E

Evgenia Chernyshova

National University of Science and Technology MISIS Moscow 119049 Russia

T

Tatyana Sviridova

National University of Science and Technology MISIS Moscow 119049 Russia

A

Aleksei Bogach

Prokhorov General Physics Institute of the Russian Academy of Sciences Moscow 119991 Russia

A

Andrei Voronin

National University of Science and Technology MISIS Moscow 119049 Russia

H

Hieu Duy Nguyen

Center for Basic Research on Materials (CBRM) National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 Japan

N

Naoyuki Kawamoto

Center for Basic Research on Materials (CBRM) National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 Japan

E

Ernst Bauer

Institute of Solid State Physics TU Wien Vienna A‐1040 Austria

V

Vladimir Khovaylo

National University of Science and Technology MISIS Moscow 119049 Russia; Belgorod State University Belgorod 308015 Russia

T

Takao MORI

WPI‐MANA, National Institute for Materials Science (NIMS) Tsukuba Ibaraki 305‐0044 Japan; Graduate School of Pure and Applied Sciences University of Tsukuba Tsukuba Ibaraki 305‐8573 Japan

Funding

Russian Science Foundation Award: 19‐79‐10282

Ministry of Education, Culture, Sports, Science and Technology Award: JPMXP1223NM5114

Japan Science and Technology Agency Award: JPMJSP2124

JST-Mirai Program Award: JPMJMI19A1

Cite This Article

Illia Serhiienko, Andrei Novitskii, Fabian Garmroudi, et al. (2024). Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge States. Advanced Science, 11(26). https://doi.org/10.1002/advs.202309291

Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge States

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