Enhancement of the photoelectrochemical performance of bismuth vanadate (
                    
                      BiVO
                      4
                    
                    ) photoanode by building a W:
                    
                      BiVO
                      4
                    
                    /Mo:
                    
                      BiVO
                      4
                    
                    Homojunction

Seung Hyeon Jeong; Aram Hong; Zhenhua Pan; Kenji Katayama; Woon Yong Sohn

doi:10.1002/bkcs.12943

journal article Open Access Jan 27, 2025

Enhancement of the photoelectrochemical performance of bismuth vanadate ( BiVO 4 ) photoanode by building a W: BiVO 4 /Mo: BiVO 4 Homojunction

Seung Hyeon Jeong Aram Hong Zhenhua Pan

Kenji Katayama Woon Yong Sohn

Bulletin of the Korean Chemical Society Vol. 46 No. 3 pp. 301-309 · Wiley

View at Publisher Save 10.1002/bkcs.12943

Abstract

Abstract

We fabricated a highly efficient bismuth vanadate (BiVO
4
)‐based photoanode by constructing a W:BiVO
4
/Mo:BiVO
4
homojunction configuration. It was confirmed that, in the case of Type‐II junction, the photocurrent density was drastically enhanced and the onset potential was cathodically shifted. The origins of the enhanced photo‐electrochemical performance could be attributed to the improvement of the charge separation efficiency, which resulted from both the built‐in electric field and Fermi level unpinning, achieved by the homojunction and Mo doping, respectively.

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Metrics

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Citations

50

References

Details

Published: Jan 27, 2025
Vol/Issue: 46(3)
Pages: 301-309
License: View

Authors

S

Seung Hyeon Jeong

Department of Chemistry Chungbuk National University Cheongju Chungbuk Korea; Chungbuk National University G‐LAMP Project Group Cheongju Chungbuk Korea

A

Aram Hong

Chungbuk National University G‐LAMP Project Group Cheongju Chungbuk Korea

Z

Zhenhua Pan

Department of Applied Chemistry Graduate School of Engineering, University of Hyogo Hyogo Japan

K

Kenji Katayama

Department of Applied Chemistry Chuo University Tokyo Japan

W

Woon Yong Sohn

Department of Chemistry Chungbuk National University Cheongju Chungbuk Korea; Chungbuk National University G‐LAMP Project Group Cheongju Chungbuk Korea

Funding

Ministry of Education Award: RS‐2024‐00445180

Ministry of Science and ICT, South Korea Award: 2022R1F1A1068177

Cite This Article

Seung Hyeon Jeong, Aram Hong, Zhenhua Pan, et al. (2025). Enhancement of the photoelectrochemical performance of bismuth vanadate ( BiVO 4 ) photoanode by building a W: BiVO 4 /Mo: BiVO 4 Homojunction. Bulletin of the Korean Chemical Society, 46(3), 301-309. https://doi.org/10.1002/bkcs.12943

Enhancement of the photoelectrochemical performance of bismuth vanadate ( BiVO 4 ) photoanode by building a W: BiVO 4 /Mo: BiVO 4 Homojunction

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