High‐performance hole‐selective V2OX/SiOX/NiOX contact for crystalline silicon solar cells

Guanlin Du; Le Li; Haiyin Zhu; Linfeng Lu; Xi Zhou; Zeyu Gu; Shan‐Ting Zhang; Xinbo Yang; Jilei Wang; Liyou Yang; Xiaoyuan Chen; Dongdong Li

doi:10.1002/eom2.12175

journal article Open Access Jan 10, 2022

High‐performance hole‐selective V2OX/SiOX/NiOX contact for crystalline silicon solar cells

Guanlin Du Le Li

Haiyin Zhu Linfeng Lu

Xi Zhou

Zeyu Gu

Shan‐Ting Zhang Xinbo Yang

Jilei Wang

Liyou Yang Xiaoyuan Chen

Dongdong Li

EcoMat Vol. 4 No. 3 · Wiley

View at Publisher Save 10.1002/eom2.12175

Abstract

AbstractHigh work function vanadium oxide (V2OX, X < 5) is expected to induce strong upward band bending at crystalline silicon (c‐Si) surface thus selectively collect photogenerated hole‐carriers. However, the performance of c‐Si solar cells employing V2OX‐based hole‐selective contacts is still under expectation. Herein, we improve the hole‐selectivity of V2OX in combination with NiOX. The innovative V2OX/NiOX stack shows reduced contact resistivity but deteriorated minority carrier lifetime due to undesired interfacial reaction between V2OX and NiOX. Inserting an ultrathin SiOX interlayer suppresses the reaction and preserves the high work function of V2OX. A remarkable power conversion efficiency of 22.03% (fill factor of 83.07%) was achieved on p‐type c‐Si solar cells featuring a full‐area V2OX/SiOX/NiOX rear contact, which is so far the highest value reported for V2OX‐based selective contacts. Our work highlights the significance of implementing p‐type transition‐metal‐oxides to boost the selectivity of V2OX and the like.image

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Details

Published: Jan 10, 2022
Vol/Issue: 4(3)
License: View

Authors

G

Guanlin Du

The Interdisciplinary Research Center, Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China; School of Microelectronics University of Chinese Academy of Sciences Beijing China

L

Le Li

The Interdisciplinary Research Center, Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China

H

Haiyin Zhu

School of Physical Science and Technology ShanghaiTech University Shanghai China

L

Linfeng Lu

The Interdisciplinary Research Center, Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China

X

Xi Zhou

The Interdisciplinary Research Center, Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China

Z

Zeyu Gu

The Interdisciplinary Research Center, Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China

S

Shan‐Ting Zhang

IPVF Institut Photovoltaïque d'Ile‐de‐France Palaiseau France

X

Xinbo Yang

College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS) Soochow University Suzhou China

J

Jilei Wang

Jinneng Clean Energy Technology LTD Jinzhong China

L

Liyou Yang

Jinneng Clean Energy Technology LTD Jinzhong China

X

Xiaoyuan Chen

The Interdisciplinary Research Center, Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China

D

Dongdong Li

The Interdisciplinary Research Center, Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China; School of Microelectronics University of Chinese Academy of Sciences Beijing China; Dalian National Laboratory for Clean Energy Dalian China

Funding

National Natural Science Foundation of China Award: 62174114

Natural Science Foundation of Shanghai Award: 19ZR1479100

Cite This Article

Guanlin Du, Le Li, Haiyin Zhu, et al. (2022). High‐performance hole‐selective V2OX/SiOX/NiOX contact for crystalline silicon solar cells. EcoMat, 4(3). https://doi.org/10.1002/eom2.12175

High‐performance hole‐selective V2OX/SiOX/NiOX contact for crystalline silicon solar cells

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