Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage

Nian‐Ke Chen; Zhen‐Ze Li; Xue‐Peng Wang; Shengbai Zhang; Xian‐Bin Li

doi:10.1002/inf2.12341

journal article Open Access Jul 12, 2022

Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage

Nian‐Ke Chen Zhen‐Ze Li Xue‐Peng Wang Shengbai Zhang Xian‐Bin Li

InfoMat Vol. 4 No. 8 · Wiley

View at Publisher Save 10.1002/inf2.12341

Abstract

AbstractFerroelectric memory is a promising candidate for next‐generation nonvolatile memory owing to its outstanding performance such as low power consumption, fast speed, and high endurance. However, the ferroelectricity of conventional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer scale. As a result, the miniaturization of ferroelectric devices was hindered, which makes ferroelectric memory unable to keep up with the development of integrated‐circuit (IC) miniaturization. Recently, a two‐dimensional (2D) In2Se3was reported to maintain stable ferroelectricity at the ultrathin scale, which is expected to break through the bottleneck of miniaturization. Soon, devices based on 2D In2Se3, including the ferroelectric field‐effect transistor, ferroelectric channel transistor, synaptic ferroelectric semiconductor junction, and ferroelectric memristor were demonstrated. However, a comprehensive understanding of the structures and the ferroelectric‐switching mechanism of 2D In2Se3is still lacking. Here, the atomic structures of different phases, the dynamic mechanism of ferroelectric switching, and the performance/functions of the latest devices of 2D In2Se3are reviewed. Furthermore, the correlations among the structures, the properties, and the device performance are analyzed. Finally, several crucial problems or challenges and possible research directions are put forward. We hope that this review paper can provide timely knowledge and help for the research community to develop 2D In2Se3based ferroelectric memory and computing technology for practical industrial applications.image

Topics

No keywords indexed for this article. Browse by subject →

References

135

[1]

10.1038/s41928-019-0270-x

[2]

10.1038/s41928-017-0002-z

[3]

10.1002/aelm.201400056

[4]

Editorial "Big data needs a hardware revolution" Nature (2018)

[5]

10.1002/inf2.12077

[6]

Semiconductor Industry Association.International Technology Roadmap for Semiconductors (ITRS). 2015. Accessed Jun 05 2015.https://www.semiconductors.org/resources/2015-international-technology-roadmap-for-semiconductors-itrs/.

[7]

10.1126/science.246.4936.1400

[8]

10.1126/science.1129564

[9]

10.1038/natrevmats.2016.87

[10]

BuckDA.Ferroelectrics for Digital Information Storage and Switching. Massachusetts Institute of Tech Cambridge Digital Computer Lab; 1952.

[11]

10.1063/1.4864100

[12]

10.1038/ncomms4583

[13]

10.1021/acsami.8b12092

[14]

10.1038/s41467-020-16606-w

[15]

10.1126/science.1092508

[16]

10.1109/6.29346

[17]

10.1109/4.5940

[18]

10.1116/1.578044

[19]

10.1080/10584589908210168

[20]

10.1007/978-94-007-1019-1_34

[21]

10.1080/10584589908215630

[22]

10.1080/10584580390258264

[23]

10.1109/6.591665

[24]

Two-dimensional materials for next-generation computing technologies

Chunsen Liu, Huawei Chen, Shuiyuan Wang et al.

Nature Nanotechnology 10.1038/s41565-020-0724-3

[25]

10.1038/s41565-021-00921-4

[26]

10.1002/advs.202004185

[27]

Depolarization fields in thin ferroelectric films

R. R. Mehta, B. D. Silverman, J. T. Jacobs

Journal of Applied Physics 10.1063/1.1662770

[28]

10.1038/d41586-018-05807-5

[29]

10.1103/physrevb.50.698

[30]

10.1038/nature01501

[31]

Critical thickness of ultrathin ferroelectric BaTiO3 films

D. H. Kim, J. D. Kim, Y. J. Chang et al.

Applied Physics Letters 10.1063/1.1880443

[32]

10.1103/physrevlett.96.107603

[33]

10.1103/physrevb.64.235403

[34]

10.1103/physrevb.70.104108

[35]

10.1103/physrevlett.96.137603

[36]

Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films

K. J. Choi, M. Biegalski, Y. L. Li et al.

Science 10.1126/science.1103218

[37]

10.1103/physrevb.72.020101

[38]

10.1103/physrevb.90.184107

[39]

10.1038/s41699-018-0063-5

[40]

10.1002/aelm.201900818

[41]

10.1063/5.0028079

[42]

10.1002/adma.202005098

[43]

Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes

Fucai Liu, Lu You, Kyle L. Seyler et al.

Nature Communications 10.1038/ncomms12357

[44]

10.1126/science.aad8609

[45]

10.1038/ncomms14956

[46]

10.1021/acs.nanolett.7b02198

[47]

10.1039/c8nr04422h

[48]

Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit

Fei Xue, Weijin Hu, Ko‐Chun Lee et al.

Advanced Functional Materials 10.1002/adfm.201803738

[49]

10.1021/acs.nanolett.7b04852

[50]

Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking

Jun Xiao, Hanyu Zhu, Ying Wang et al.

Physical Review Letters 10.1103/physrevlett.120.227601

Showing 50 of 135 references

Cited By

121

Flexible Memory: Progress, Challenges, and Opportunities

Ruizhi Yuan, Sen Chen · 2025

Advanced Intelligent Discovery

Metrics

121

Citations

135

References

Details

Published: Jul 12, 2022
Vol/Issue: 4(8)
License: View

Authors

N

Nian‐Ke Chen

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering Jilin University Changchun China

Z

Zhen‐Ze Li

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering Jilin University Changchun China

X

Xue‐Peng Wang

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering Jilin University Changchun China

S

Shengbai Zhang

Department of Physics, Applied Physics, and Astronomy Rensselaer Polytechnic Institute Troy New York USA

X

Xian‐Bin Li

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering Jilin University Changchun China

Funding

National Natural Science Foundation of China Award: 11874171

Fundamental Research Funds for the Central Universities

China Postdoctoral Science Foundation Award: 2019M661200

Cite This Article

Nian‐Ke Chen, Zhen‐Ze Li, Xue‐Peng Wang, et al. (2022). Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage. InfoMat, 4(8). https://doi.org/10.1002/inf2.12341

Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage

You May Also Like