Fast in situ X‐ray analysis of Ni silicide formation

Peter Zaumseil; Dirk Wolansky

doi:10.1002/pssb.201600859

journal article Mar 16, 2017

Fast in situ X‐ray analysis of Ni silicide formation

Peter Zaumseil

Dirk Wolansky

physica status solidi (b) Vol. 254 No. 7 · Wiley

View at Publisher Save 10.1002/pssb.201600859

Abstract

Metal silicides are the preferred contact materials for metal‐oxide semiconductor (MOS) structures. With further technology development, the materials changed within the last decades toward lower resistivity and lower thermal budget. Currently NiSi partly further stabilized with Pt or Pd is the material of choice. The understanding of phase transformation processes and structural features is of great importance for production process optimization. Here we present a fast laboratory‐based in situ X‐ray diffraction method with two different experimental arrangements (Bragg–Brentano and grazing incidence) optimized concerning the materials texture. Its application is demonstrated for the transformation of Ni to different Ni silicide phases starting with a 46 nm thick Ni layer sputtered on a Si(001) substrate and covered with TiN. Activation energies for the Ni to Ni2Si (1.55 ± 0.13) eV and the Ni2Si to NiSi transition (1.30 ± 0.15) eV are measured by repeating fast diffraction scans over a limited angular range under isothermal conditions and analyzing the diffraction peak height versus time.

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Details

Published: Mar 16, 2017
Vol/Issue: 254(7)
License: View

Authors

P

Peter Zaumseil

IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany

D

Dirk Wolansky

IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany

Cite This Article

Peter Zaumseil, Dirk Wolansky (2017). Fast in situ X‐ray analysis of Ni silicide formation. physica status solidi (b), 254(7). https://doi.org/10.1002/pssb.201600859

Fast in situ X‐ray analysis of Ni silicide formation

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