25‐1:
                    Invited Paper:
                    Achieving high uniformity and yield of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications with precise strain‐engineering

A. Nishikawa; A. Loesing; B. Slischka

doi:10.1002/sdtp.12925

journal article May 29, 2019

25‐1: Invited Paper: Achieving high uniformity and yield of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications with precise strain‐engineering

A. Nishikawa A. Loesing B. Slischka

SID Symposium Digest of Technical Papers Vol. 50 No. 1 pp. 338-341 · Wiley

View at Publisher Save 10.1002/sdtp.12925

Abstract

One of the big challenges of micro LED displays is to reduce cost/increase yield and establish excellent manufacturability. Galliumnitride on silicon (GaN‐on‐Si) LED epiwafers offer fundamental cost advantages to the entire process flow for micro LEDs compared with conventional GaN‐on‐sapphire LED epiwafers. However, due to the difficulties of epitaxial growth of GaN‐on‐Si, demonstration of such cost advantages in micro LED application is not wide‐spread yet. In this presentation, we have demonstrated excellent emission uniformity with well‐controlled strain by precise strain‐engineering. This opens the way to use the advantages of GaN‐on‐Si LED epiwafers in the entire supply chain of micro LED making and thus reduce cost significantly and enable high yield manufacturing.

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References

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8

References

Details

Published: May 29, 2019
Vol/Issue: 50(1)
Pages: 338-341
License: View

Authors

A

A. Nishikawa

ALLOS Semiconductors GmbH Dresden Germany

A

A. Loesing

ALLOS Semiconductors GmbH Dresden Germany

B

B. Slischka

ALLOS Semiconductors GmbH Dresden Germany

Cite This Article

A. Nishikawa, A. Loesing, B. Slischka (2019). 25‐1: Invited Paper: Achieving high uniformity and yield of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications with precise strain‐engineering. SID Symposium Digest of Technical Papers, 50(1), 338-341. https://doi.org/10.1002/sdtp.12925

25‐1: Invited Paper: Achieving high uniformity and yield of 200 mm GaN‐on‐Si LED epiwafers for micro LED applications with precise strain‐engineering

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