journal article May 01, 2021

P‐19: Student Poster: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistors for Gate‐Driver Circuit Fabricated on a Flexible Substrate

View at Publisher Save 10.1002/sdtp.14891
Abstract
The effects of fluorination on amorphous indium‐gallium‐zinc oxide thin‐film transistors fabricated on polyimide (PI) at a maximal temperature of 300 °C were investigated. An excimer laser was used to lift‐off the PI from a glass‐based carrier substrate. The resulting TFTs exhibit more positive threshold voltage, steeper subthreshold swing, reduced apparent short‐channel effects, and tighter distribution of device parameters. Various test circuit blocks and a 4‐stage 15T1C gate driver were constructed to demonstrate the beneficial effects of fluorination on circuit applications.
Topics

No keywords indexed for this article. Browse by subject →

References
10
[4]
Lu L "Enhanced scalability and reliability of InGaZnO thin-film transistor using a combination of plasma fluorination and thermal oxidization" Proc Int Disp Work (2017)
[8]
Lu L "High-performance and reliable elevated-metal metal-oxide thin-film transistor for highresolution displays" Tech Dig - Int Electron Devices Meet IEDM (2017)
[9]
Pseudo-CMOS: A Design Style for Low-Cost and Robust Flexible Electronics

Tsung-Ching Huang, Kenjiro Fukuda, Chun-Ming Lo et al.

IEEE Transactions on Electron Devices 10.1109/ted.2010.2088127
Metrics
3
Citations
10
References
Details
Published
May 01, 2021
Vol/Issue
52(1)
Pages
1124-1127
License
View
Cite This Article
Runxiao Shi, Sisi Wang, Yuqi Wang, et al. (2021). P‐19: Student Poster: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistors for Gate‐Driver Circuit Fabricated on a Flexible Substrate. SID Symposium Digest of Technical Papers, 52(1), 1124-1127. https://doi.org/10.1002/sdtp.14891
Related

You May Also Like