Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements

N. A. Stolwijk; B. Schuster; J. H�lzl

doi:10.1007/bf00617619

journal article Feb 01, 1984

Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements

N. A. Stolwijk B. Schuster

J. H�lzl

Applied Physics A Solids and Surfaces Vol. 33 No. 2 pp. 133-140 · Springer Science and Business Media LLC

View at Publisher Save 10.1007/bf00617619

Topics

No keywords indexed for this article. Browse by subject →

References

18

[1]

Mechanism of Diffusion of Copper in Germanium

F. C. Frank, D. Turnbull

Physical Review 1956 10.1103/physrev.104.617

[2]

U. Gösele, W. Frank, A. Seeger: Appl. Phys.23, 361 (1980) 10.1007/bf00903217

[3]

N.A. Stolwijk, B. Schuster, J. Hölzl, H. Mehrer, W. Frank: InDefects in Semiconductors (1982), ed. by C.A.J. Ammerlaan (North-Holland, Amsterdam 1983); Physica116B, 335 (1983)

[4]

F. Morehead, N.A. Stolwijk, W. Meyberg, U. Gösele: Appl. Phys. Lett.42, 690 (1983) 10.1063/1.94074

[5]

L.M.L.J. Leblans, M.L. Verheijke: Philips Tech. Rev.25, 191 (1963/64)

[6]

R.G. Mazur, D.H. Dickey: J. Electrochem. Soc.113, 255 (1966) 10.1149/1.2423927

[7]

A. Seeger: Phys. Status Solidi A61, 521 (1980) 10.1002/pssa.2210610225

[8]

J. Crank:The Mathematics of Diffusion (Oxford University Press, London 1957)

[9]

A. Seeger, K.P. Chik: Phys. Status Solidi29, 455 (1968) 10.1002/pssb.19680290202

[10]

W. Frank:Advances in Solid State Physics 21, 221 (Vieweg, Braunschweig 1981)

[11]

A.D. LeClaire:Physical Chemistry,10, 261 (Academic Press, New York 1970)

[12]

C.B. Collins, R.O. Carlson, C.J. Galagher: Phys. Rev.105, 1168 (1957) 10.1103/physrev.105.1168

[13]

W.M. Bullis, F.J. Strieter: J. Appl. Phys.39, 314 (1968) 10.1063/1.1655751

[14]

H.J. Mayer, H. Mehrer, K. Maier: Inst. Phys. Conf. Ser.31, 186 (1977)

[15]

L. Kalinowski, R. Seguin: Appl. Phys. Lett.35, 211 (1979);36, 171 (1980) 10.1063/1.91097

[16]

L.-Å. Ledebo, Zhan-Guo Wang: Appl. Phys. Lett.42, 680 (1983) 10.1063/1.94070

[17]

W.M. Bullis: Solid-State Electron.9, 143 (1966) 10.1016/0038-1101(66)90085-2

[18]

W.R. Thurber, D.L. Lewis, W.M. Bullis: Air Force Cambridge Research Laboratories Report AFCRL-TR-73-0107, Bedford, Massachusetts (1973)

Cited By

128

Diffusion of gold in silicon during rapid thermal annealing: Effectiveness of the surface as a sink for self-interstitials

W. Lerch, N. A. Stolwijk · 1998

Journal of Applied Physics

Metrics

128

Citations

18

References

Details

Published: Feb 01, 1984
Vol/Issue: 33(2)
Pages: 133-140
License: View

Authors

Department of Dermatology and Allergy Technical University of Munich Munich Germany

J

J. H�lzl

Cite This Article

N. A. Stolwijk, B. Schuster, J. H�lzl (1984). Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements. Applied Physics A Solids and Surfaces, 33(2), 133-140. https://doi.org/10.1007/bf00617619

Diffusion of gold in silicon studied by means of neutron-activation analysis and spreading-resistance measurements

You May Also Like