Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system

W. Taudt; B. Wachtendorf; F. Sauerländer; H. Hamadeh; S. Lampe; M. Heuken

doi:10.1007/bf02676830

journal article Nov 01, 1995

Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system

W. Taudt B. Wachtendorf F. Sauerländer H. Hamadeh S. Lampe M. Heuken

Journal of Electronic Materials Vol. 24 No. 11 pp. 1671-1675 · Springer Science and Business Media LLC

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Published: Nov 01, 1995
Vol/Issue: 24(11)
Pages: 1671-1675
License: View

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Cite This Article

W. Taudt, B. Wachtendorf, F. Sauerländer, et al. (1995). Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system. Journal of Electronic Materials, 24(11), 1671-1675. https://doi.org/10.1007/bf02676830

Low temperature growth and planar doping of ZnSe in a plasma-stimulated LP-MOVPE system

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