journal article Feb 01, 1986

Thin Film Deposition Techniques in Microelectronics

View at Publisher Save 10.1007/bf03257928
Topics

No keywords indexed for this article. Browse by subject →

References
53
[1]
F.O. Sequeda, “Integrated Circuit Fabrication—A Process Overview,” Journal of Metals, pp. 43–50, May 1985.
[2]
F.O. Sequeda, “The Role of Thin Film Materials on the Technology of Integrated Circuit Fabrication,” Journal of Metals, pp. 54–60, November 1985.
[3]
R.F. Bunshah et al., Eds., Deposition Technologies for Films and Coatings, Noyes Publications, Park Ridge, NJ (1982).
[4]
J.L. Vossen and W. Kern, Eds., Thin Film Processes, Academic Press, New York, (1978).
[5]
J.A. Thronton, “Physical Vapor Deposition,” Semiconductor Materials and Process Technologies, G.E. McGuide, Ed., Noyes Publications, Park Ridge, NJ, (1984).
[6]
E.C. Douglas, “Advanced Process Technology for VLSI Circuits,” Solid State Technology, pp. 65–72, May 1981.
[7]
F.O. Sequeda, “Reduced Pressure Chemical Vapor Deposition for Integrated Circuit Manufacturing,” Proceedings of 3rd-Brazalian Workshop on Microelectronics, pp. 7–17, Published by LED-FEC-UNIcamp, Brazil, 1982.
[8]
J. Monkowski, “Chemical Vapor Deposition: Processes and Potential Defect Sources,” Microelectronic Manufacturing Testing, pp. 14–17, June 1985.
[9]
K. Schuegraf, “Chemical Vapor Deposition Technology for Integrated Circuit Manufacturing,” Microelectronic Manufacturing and Testing, pp. 35–37, June 1981.
[10]
M.L. Green and R.A. Levy, “Chemical Vapor Deposition of Metals for Integrated Circuits Applications,” Journal of Metals, pp. 63–71, June 1985.
[11]
S.C. Su, “Low Temperature Silicon Processing Techniques for VLSIC Fabrication,” Solid State Technology, pp. 71–81, March 1981.
[12]
J.J. Cuomo, “The Deposition of Thin Films by Glow Discharge Sputtering,” Ph.D. Thesis, Physics Institute, Odense Universitet, November 1979. Also, IBM Report RC 9474, July 1982.
[13]
R. Harman, “Fundamentals Aspects of Cathodic Sputtering,” Proceedings of 3rd International Symposium of Sputtering and Their Applications, pp. 229–258, Sept. 1979, Nice, France. Published by French Vacuum Society.
[14]
G. Jorgenson, Electro-Optical Systems Design, November 1981, pp. 11–23.
[15]
F. Mohammadi, “Silicides for MOS Gates and Interconnections in Integrated Circuit Technology,” Technical Report No. G503-1, Stanford Electronics Laboratories, August 1980.
[16]
J. Tison, “High Vacuum Thin Film Technology— An Overview,” Microelectronic Manufacturing and Testing, pp. 22–26, November 1983.
[17]
R.S. Nowicki, “Sputtering for VLSI,” VLSI Electronics-Microstructure Science—Vol. 8: Plasma Processing for VLSI, Ed. by N. Einspruch and D. Brown, Academic Press, NY, 1984.
[18]
G. Hughes and C. Ridge, “New Sputtering Techniques for Semiconductor Metallization,” Vacuum, Vol. 34, No. 3–4, pp. 365–369, 1984. 10.1016/0042-207x(84)90068-x
[19]
N. Mclntyre and S.J. Wright, “Characterization of Bias Sputtered Metallization for IC Technology,” Vacuum, Vol. 34, No. 10–11, pp. 963–968, 1984. 10.1016/0042-207x(84)90179-9
[20]
J. Harper, J.J. Cuomo and H.R. Kaufman, “Material Processing with Broad-Beam Ion Sources,” Ann. Rev. Mater. Sci., Vol. 13, pp. 413–439, 1983. 10.1146/annurev.ms.13.080183.002213
[21]
D.S. Yee, J. Floro, J. Cuomo and K.Y. Ahn, “Stress Modification of WSi2 Films by Concurrent Low Energy Ion Bombardment During Alloy Evaporation,” J. Vac. Sci. Technol., A3 (6), p. 2121–2128, Nov.-Dec. 1985. 10.1116/1.573265
[22]
P.H. Singer, “Techniques of Low Pressure Chemical Vapor Deposition,” Semiconductor International, p. 72–77, May 1984.
[23]
M. Hitchman and W. Ahmed, “Some Recent Trends in the Preparation of Thin Layers by Low Pressure Chemical Vapor Deposition,” Vacuum, 34(10–11), pp. 979–986, 1984. 10.1016/0042-207x(84)90182-9
[24]
D.L. Bross, J. Fair, K. Monning and K.C. Saraswat, “Low Pressure Chemical Vapor Deposition of Tungsten Silicide,” Semiconductor International, pp. 82–85, May 1984.
[25]
K.C. Saraswat, S. Swirhur and J.P. McVittie, “Selective CVD of Tungsten for VLSI Technology,” VLSI Science and Technology/1984, pp. 409–419, Proceedings Vol. 84–87, The Electrochemical Society, 1984.
[26]
A.C. Adams, “Dielectric and Polysilicon Film Deposition,” Chapter 3, VLSI Technology, Ed. S.M. Sze, McGraw Hill, NY, 1983.
[27]
M.J. Cooke, R.A. Heinecke and R.C. Stern, “LPCVD of Aluminum and Al-Si Alloys for Semiconductor Metallization,” Solid State Technology, pp. 62–65, December 1982.
[28]
B. Gorowitz, T.B. Gofoczyca and R.J. Sara, “Applications of Plasma Enhanced Chemical Vapor Deposition in VLSI,” Solid State Technology, pp. 197–203, June 1985.
[29]
C.C. Tang, J.K. Chu and D.W. Hess, “Plasma-Enhanced of Tungsten, Molybdenum, and Tungsten Silicide Films,” Solid State Technology, pp. 125–128, March 1983.
[30]
R.S. Rosier and G.M. Engle, “Plasma-Enhanced CVD of Titanium Silicide,” J. Vac. Sci. Technol., B2(4), pp. 733–737, Oct.-Dec. 1984.
[31]
T.B. Gorczyca and B. Gorowitz, “Plasma Enhanced Chemical Vapor Deposition of Dielectrics,” VLSI Electronics-Microstructure Science—Vol. 8: Plasma Processing for VLSI, Ed. by N. Einspruch and D. Braun, Academic Press, NY, 1984.
[32]
A.D. Weiss, “Plasma Enhanced CVD: Silicon Nitride and Beyond,” Semiconductor International, pp. 88–94, July 1983.
[33]
J. Tong, K. Schertenleib and R. Carpio, “Process and Film Characterization of PECVD Borophosphosilicate Films for VLSI Applications,” Solid State Technology, pp. 161–170, January 1984.
[34]
J.W. Peters, F.L. Gebhart and T.C. Hall, “Low Temperature Photo-CVD Silicon Nitride: Properties and Applications,” Solid State Technology, pp. 121–126, September 1980.
[35]
J.Y. Chen, et al., “Photo-CVD Technique and Its Applications,” J. Electrochem. Soc., 13 (9), pp. 2146–2151, (1984). 10.1149/1.2116038
[36]
W.H. Ritchie, W. Metz, P.K. Buyer and G. Collins, “Comparison of Laser and Plasma Assisted Deposition of Silicon Nitride,” Symposium Silicon Nitride Thin Insulating Films, Proceedings Vol. 83–8, pp. 160–166, The Electrochemical Society, 1983.
[37]
G.A. West, K.W, Beeson and A. Gupta, “Laser Induced Chemical Vapor Deposition of Titanium Silicide Films,” J. Vac. Sci., Technol. A3 (6), pp. 2278–2282, Nov.-Dec. 1985. 10.1116/1.572907
[38]
R. Solanki, C. Moore and G. Collins, “Laser-Induced Chemical Vapor Deposition,” Solid State Technology, pp. 220–226, June 1985.
[39]
F.O. Sequeda, “Metallization for VLSI: Silicide Contacts, Polycide Gates and Barrier Layers in Microelectronic Devices,” Proceedings of 2nd Spanish Conference on Microelectronics, Alicante, Spain, October 1984.
[40]
S.P. Murarka, “Transition Metal Silicides-Low Resistivity Alternatives for Polysilicon and Metals in Integrated Circuits,” Journal of Metals, pp. 54–60, July 1984.
[41]
P. Burggraaf, “Advances in Metallization Technology,” Semiconductor International, pp. 72–79, November 1985.
[42]
P. Burggraaf, “Silicide Technology Spotlight,” Semiconductor International, pp. 293–298, May 1985.
[43]
C.Y. Ting, “Silicide for Contacts and Interconnects,” Technical Digest of the International Electron Devices Meeting, San Francisco, Calif., Dec. 9–12, 1984.
[44]
D.R. McLachlan and J.B. Avins, “Refractory Metal Silicides,” Semiconductor International, pp. 129–138, October 1984.
[45]
M.A. Nicolet and S. Lau, “Formation and Characterization of Transition Metal Silicides,” VLSI Electronics-Microstructure Science—Vol. 6: Materials and Process Characterization, Ed. by N.G. Einspruch and G. Larrabee, Academic Press, NY, 1983.
[46]
K.Y. Ahn and S. Basavaiah, “A Critical Comparison of Silicide Film Deposition Techniques,” IBM Report RC-10401, July 1984.
[47]
R. Nowicki and J. Moulder, “Comparison of the Properties of Molybdenum Silicide Films Deposited by DC Magnetron and RF Diode Co-deposition,” J. Electrochemical Soc., 128, pp. 562–567, 1981. 10.1149/1.2127458
[48]
K.W. Choi and K.Y. Ahn, “Effect of Biased Cosputtering on Resistivity and Step Coverage in Tungsten Silicide Film,” J. Vac. Sci. Technol., A3 (6), pp. 2272–2276, Nov.-Dec. 1985. 10.1116/1.572906
[49]
K.Y. Ahn, S. Herd, J.E. Baglin and J.V. Han, “Structure and Properties of Coevaporated WSix Films,” J. Vac. Sci. Technol., A3 (6), pp. 2268–2271, Nov.-Dec. 1985. 10.1116/1.572905
[50]
D.R. Nichols, “Co-sputtered Refractory-Metal Silicides for Wafer-Fabrication Applications,” Microelectronic Manufacturing Testing, pp. 36–40, May 1982.

Showing 50 of 53 references

Metrics
12
Citations
53
References
Details
Published
Feb 01, 1986
Vol/Issue
38(2)
Pages
55-65
License
View
Cite This Article
F. O. Sequeda (1986). Thin Film Deposition Techniques in Microelectronics. JOM, 38(2), 55-65. https://doi.org/10.1007/bf03257928