In-situ CVD grown WS2-MoS2 lateral heterostructure with alloyed Interface: Strong photoluminescence enhancement and high on-off ratio field effect transistors

Abdul Kaium Mia; Sourav Dey; Ľubomír Vančo; Viliam Vretenar; P.K. Giri

doi:10.1016/j.mtnano.2025.100638

journal article Aug 01, 2025

In-situ CVD grown WS2-MoS2 lateral heterostructure with alloyed Interface: Strong photoluminescence enhancement and high on-off ratio field effect transistors

Abdul Kaium Mia

Sourav Dey

Ľubomír Vančo Viliam Vretenar P.K. Giri

Materials Today Nano Vol. 31 pp. 100638 · Elsevier BV

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Published: Aug 01, 2025
Vol/Issue: 31
Pages: 100638
License: View

Authors

A

Abdul Kaium Mia

Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, India

Department of Physics, Indian Institute of Technology Guwahati, Guwahati, India

Funding

Science and Engineering Research Board Award: 5(1)/2022-NANO

Pennsylvania State University

Ministry of Electronics and Information technology

Cite This Article

Abdul Kaium Mia, Sourav Dey, Ľubomír Vančo, et al. (2025). In-situ CVD grown WS2-MoS2 lateral heterostructure with alloyed Interface: Strong photoluminescence enhancement and high on-off ratio field effect transistors. Materials Today Nano, 31, 100638. https://doi.org/10.1016/j.mtnano.2025.100638

In-situ CVD grown WS2-MoS2 lateral heterostructure with alloyed Interface: Strong photoluminescence enhancement and high on-off ratio field effect transistors

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