High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

Musarrat Hasan; Manh-Cuong Nguyen; Hyojin Kim; Seung-Won You; Yoon-Seok Jeon; Duc-Tai Tong; Dong-Hwi Lee; Jae Kyeong Jeong; Rino Choi

doi:10.1016/j.tsf.2015.04.035

journal article Aug 01, 2015

High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

Musarrat Hasan Manh-Cuong Nguyen Hyojin Kim

Seung-Won You Yoon-Seok Jeon Duc-Tai Tong Dong-Hwi Lee Jae Kyeong Jeong

Rino Choi

Thin Solid Films Vol. 589 pp. 90-94 · Elsevier BV

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Details

Published: Aug 01, 2015
Vol/Issue: 589
Pages: 90-94
License: View

Authors

Department of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea; Program in Semiconductor Convergence, Inha University, Incheon 22212, Republic of Korea; 3D Convergence Center, Inha University, Incheon 22212, Republic of Korea

Funding

Ministry of Trade, Industry and Energy Award: 10039174

Inha University

Cite This Article

Musarrat Hasan, Manh-Cuong Nguyen, Hyojin Kim, et al. (2015). High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application. Thin Solid Films, 589, 90-94. https://doi.org/10.1016/j.tsf.2015.04.035

High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

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