Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications

Dominika Majchrzak; Karol Kulinowski; Wojciech Olszewski; Rafał Kuna; Daria Hlushchenko; Adrianna Piejko; Miłosz Grodzicki; Detlef Hommel; Robert Kudrawiec

doi:10.1021/acsami.4c13225

journal article Open Access Oct 18, 2024

Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications

Dominika Majchrzak

Karol Kulinowski

Wojciech Olszewski

Rafał Kuna Daria Hlushchenko

Adrianna Piejko

Miłosz Grodzicki Detlef Hommel Robert Kudrawiec

ACS Applied Materials & Interfaces Vol. 16 No. 43 pp. 59567-59575 · American Chemical Society (ACS)

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Details

Published: Oct 18, 2024
Vol/Issue: 16(43)
Pages: 59567-59575
License: View

Authors

D

Dominika Majchrzak

Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland

K

Karol Kulinowski

Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland

W

Wojciech Olszewski

Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland; Institute of Experimental Physics, University of Wrocław, Maksa Borna 9, 50-204 Wrocław, Poland

R

Rafał Kuna

Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland

D

Daria Hlushchenko

Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland; Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland

A

Adrianna Piejko

Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland; Department of Nanometrology, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

M

Miłosz Grodzicki

Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland; Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland

D

Detlef Hommel

Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland; Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422 Wrocław, Poland

R

Robert Kudrawiec

Łukasiewicz Research Network - PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland; Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland

Funding

Narodowe Centrum Nauki Award: 2022/45/B/ST7/02750

Cite This Article

Dominika Majchrzak, Karol Kulinowski, Wojciech Olszewski, et al. (2024). Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications. ACS Applied Materials & Interfaces, 16(43), 59567-59575. https://doi.org/10.1021/acsami.4c13225

Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications

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