Enhancing Performance and Reliability of FeNAND Hybrid Memory via a 2D-WS
                    2
                    Layer for Charge Trapping and Ferroelectric Crystallization

Hojung Jang; Seungkwon Hwang; Jongwon Yoon; Jung-Dae Kwon; Yonghun Kim; Hyunsang Hwang

doi:10.1021/acsami.5c16637

journal article Jan 19, 2026

Enhancing Performance and Reliability of FeNAND Hybrid Memory via a 2D-WS 2 Layer for Charge Trapping and Ferroelectric Crystallization

Hojung Jang

Seungkwon Hwang Jongwon Yoon

Jung-Dae Kwon Yonghun Kim

Hyunsang Hwang

ACS Applied Materials & Interfaces Vol. 18 No. 3 pp. 5417-5426 · American Chemical Society (ACS)

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Citations

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References

Details

Published: Jan 19, 2026
Vol/Issue: 18(3)
Pages: 5417-5426
License: View

Authors

H

Hojung Jang

Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering; Pohang University of Science and Technology (POSTECH)

S

Seungkwon Hwang

Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering; Pohang University of Science and Technology (POSTECH); Energy and Environment Materials Research Division; Korea Institute of Materials Science (KIMS)

J

Jongwon Yoon

Energy and Environment Materials Research Division; Korea Institute of Materials Science (KIMS)

J

Jung-Dae Kwon

Energy and Environment Materials Research Division; Korea Institute of Materials Science (KIMS)

Y

Yonghun Kim

Energy and Environment Materials Research Division; Korea Institute of Materials Science (KIMS)

H

Hyunsang Hwang

Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering; Pohang University of Science and Technology (POSTECH)

Funding

National Research Foundation of Korea (NRF) grant funded by the Korea Government (MSIT) Award: 2018R1A3B1052693

Cite This Article

Hojung Jang, Seungkwon Hwang, Jongwon Yoon, et al. (2026). Enhancing Performance and Reliability of FeNAND Hybrid Memory via a 2D-WS 2 Layer for Charge Trapping and Ferroelectric Crystallization. ACS Applied Materials & Interfaces, 18(3), 5417-5426. https://doi.org/10.1021/acsami.5c16637

Enhancing Performance and Reliability of FeNAND Hybrid Memory via a 2D-WS 2 Layer for Charge Trapping and Ferroelectric Crystallization

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