Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1–xBixI3 Perovskite-Based Memory Device

Shuaipeng Ge; Yuhang Wang; Zhongcheng Xiang; Yimin Cui

doi:10.1021/acsami.8b07079

journal article Jul 03, 2018

Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1–xBixI3 Perovskite-Based Memory Device

Shuaipeng Ge Yuhang Wang

Zhongcheng Xiang Yimin Cui

ACS Applied Materials & Interfaces Vol. 10 No. 29 pp. 24620-24626 · American Chemical Society (ACS)

View at Publisher Save 10.1021/acsami.8b07079

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References

45

[1]

Memristive switching mechanism for metal/oxide/metal nanodevices

J. Joshua Yang, Matthew D. Pickett, Xuema Li et al.

Nature Nanotechnology 10.1038/nnano.2008.160

[2]

10.1038/nmat2023

[3]

10.1021/am500048y

[4]

Flexible Hybrid Organic–Inorganic Perovskite Memory

Chungwan Gu

ACS Nano 10.1021/acsnano.6b01643

[5]

10.1002/adma.201705193

[6]

10.1021/acsnano.6b02711

[7]

10.1039/c7tc02383a

[8]

10.1002/adma.201304054

[9]

10.1021/am301769f

[10]

10.1039/c3cp00132f

[11]

10.1002/admi.201600192

[12]

10.1016/j.jallcom.2018.01.044

[13]

10.1002/adfm.201704665

[14]

10.1002/adma.201701333

[15]

10.1002/admi.201601035

[16]

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

Bohee Hwang, Jang‐Sik Lee

Advanced Materials 10.1002/adma.201701048

[17]

Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices

Eun Ji Yoo, Miaoqiang Lyu, Chi Jung Kang et al.

Advanced Materials 10.1002/adma.201502889

[18]

10.1021/acsami.7b08197

[19]

10.1039/c5ta00358j

[20]

10.1039/c6cp03851d

[21]

10.1021/ja511132a

[22]

10.1021/acs.chemmater.5b04107

[23]

10.1039/c5ta06398a

[24]

10.1021/acs.jpclett.6b01576

[25]

10.1021/acsami.6b15149

[26]

10.1007/s12274-016-1288-2

[27]

10.1016/j.ceramint.2017.02.128

[28]

10.1002/adfm.201705783

[29]

10.1021/acsenergylett.7b00508

[30]

10.1021/acs.jpcc.7b06248

[31]

Bandgap‐Tunable Cesium Lead Halide Perovskites with High Thermal Stability for Efficient Solar Cells

Rebecca J. Sutton, Giles E. Eperon, Laura Miranda et al.

Advanced Energy Materials 10.1002/aenm.201502458

[32]

10.1021/acs.jpclett.6b00002

[33]

A Review on Conduction Mechanisms in Dielectric Films

Fu-Chien Chiu

Advances in Materials Science and Engineering 10.1155/2014/578168

[34]

10.1021/acs.jpcc.7b12817

[35]

10.1063/1.4827597

[36]

10.1063/1.4881720

[37]

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

Yu Chao Yang, Feng Pan, Qi Liu et al.

Nano Letters 10.1021/nl900006g

[38]

10.1021/nl1006036

[39]

Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

Jaeho Choi, Sunghak Park, Joohee Lee et al.

Advanced Materials 10.1002/adma.201600859

[40]

10.1002/adfm.201501389

[41]

10.1063/1.3494267

[42]

10.1063/1.3560257

[43]

10.1021/nn204907t

[44]

10.1038/srep00442

[45]

10.1103/physrevx.3.041027

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Metrics

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Citations

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References

Details

Published: Jul 03, 2018
Vol/Issue: 10(29)
Pages: 24620-24626

Authors

S

Shuaipeng Ge

Key Laboratory of Micro−Nano Measurement-Manipulation and Physics, Ministry of Education, Department of Physics, Beihang University, Beijing 100191, China

Y

Yuhang Wang

State Key Laboratory of Low-Dimensional Quantum Physics, Collaborative Innovation Center of Quantum Matter, Department of Physics, Tsinghua University, Beijing 100084, China

Z

Zhongcheng Xiang

Key Laboratory of Micro−Nano Measurement-Manipulation and Physics, Ministry of Education, Department of Physics, Beihang University, Beijing 100191, China

Y

Yimin Cui

Key Laboratory of Micro−Nano Measurement-Manipulation and Physics, Ministry of Education, Department of Physics, Beihang University, Beijing 100191, China

Funding

National Natural Science Foundation of China Award: 51571006

Cite This Article

Shuaipeng Ge, Yuhang Wang, Zhongcheng Xiang, et al. (2018). Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1–xBixI3 Perovskite-Based Memory Device. ACS Applied Materials & Interfaces, 10(29), 24620-24626. https://doi.org/10.1021/acsami.8b07079

Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1–xBixI3 Perovskite-Based Memory Device

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