All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory

Can Cuhadar; Seul-Gi Kim; June-Mo Yang; Ja-Young Seo; Donghwa Lee

doi:10.1021/acsami.8b07103

journal article Jul 03, 2018

All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory

Can Cuhadar Seul-Gi Kim

June-Mo Yang Ja-Young Seo Donghwa Lee

ACS Applied Materials & Interfaces Vol. 10 No. 35 pp. 29741-29749 · American Chemical Society (ACS)

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References

48

[1]

10.1063/1.4929512

[2]

10.1016/j.mser.2014.06.002

[3]

10.1166/jnn.2012.6651

[4]

10.1201/b11086-42

[5]

10.1109/jproc.2010.2070050

[6]

10.1002/adma.200900375

[7]

Ielmini D. (2015)

[8]

10.1038/nmat3070

[9]

10.1038/nnano.2015.221

[10]

Memristive switching mechanism for metal/oxide/metal nanodevices

J. Joshua Yang, Matthew D. Pickett, Xuema Li et al.

Nature Nanotechnology 10.1038/nnano.2008.160

[11]

10.1002/adma.201004317

[12]

10.1002/adfm.201101117

[13]

Lead Iodide Perovskite Sensitized All-Solid-State Submicron Thin Film Mesoscopic Solar Cell with Efficiency Exceeding 9%

Hui-Seon Kim, Chang-Ryul Lee, Jeong-Hyeok Im et al.

Scientific Reports 10.1038/srep00591

[14]

10.1021/acsnano.7b00608

[15]

10.1002/adma.201600669

[16]

10.1039/c5ra24154e

[17]

10.1038/nature24032

[18]

10.1002/adfm.201600405

[19]

Long-Range Balanced Electron- and Hole-Transport Lengths in Organic-Inorganic CH 3 NH 3 PbI 3

Guichuan Xing, Nripan Mathews, Shikuan Sun et al.

Science 10.1126/science.1243167

[20]

10.1038/nphys3357

[21]

Perovskite solar cells: an emerging photovoltaic technology

Nam-Gyu Park

Materials Today 10.1016/j.mattod.2014.07.007

[22]

Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

Jaeho Choi, Sunghak Park, Joohee Lee et al.

Advanced Materials 10.1002/adma.201600859

[23]

10.1002/admi.201600092

[24]

Flexible Hybrid Organic–Inorganic Perovskite Memory

Chungwan Gu

ACS Nano 10.1021/acsnano.6b01643

[25]

10.1021/acsami.7b08197

[26]

10.1038/srep43794

[27]

10.1002/admi.201700131

[28]

Han J. S. Adv. Funct. Mater. (2017)

[29]

Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite

Ja-Young Seo, Jaeho Choi, Huo-Seon Kim et al.

Nanoscale 10.1039/c7nr05582j

[30]

10.1021/acs.jpcc.7b12817

[31]

Toxicity of organometal halide perovskite solar cells

Aslihan Babayigit, Anitha Ethirajan, Marc Muller et al.

Nature Materials 10.1038/nmat4572

[32]

Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)

Ilia Valov

Semiconductor Science and Technology 10.1088/1361-6641/aa78cd

[33]

10.1107/s0567740878003684

[34]

10.1021/acs.chemmater.5b03147

[35]

A Review on Conduction Mechanisms in Dielectric Films

Fu-Chien Chiu

Advances in Materials Science and Engineering 10.1155/2014/578168

[36]

10.1063/1.4712628

[37]

10.1039/c7nr01840a

[38]

10.1088/0957-4484/22/25/254002

[39]

Ion Migration in Organometal Trihalide Perovskite and Its Impact on Photovoltaic Efficiency and Stability

Yongbo Yuan, Jinsong Huang

Accounts of Chemical Research 10.1021/acs.accounts.5b00420

[40]

Grain boundary dominated ion migration in polycrystalline organic–inorganic halide perovskite films

Yuchuan Shao, Yanjun Fang, Tao Li et al.

Energy Environ. Sci. 10.1039/c6ee00413j

[41]

10.1039/c6ra01369d

[42]

10.1063/1.365215

[43]

Projector augmented-wave method

P. E. Blöchl

Physical Review B 10.1103/physrevb.50.17953

[44]

Generalized Gradient Approximation Made Simple

John P. Perdew, Kieron Burke, Matthias Ernzerhof

Physical Review Letters 10.1103/physrevlett.77.3865

[45]

Restoring the Density-Gradient Expansion for Exchange in Solids and Surfaces

John P. Perdew, Adrienn Ruzsinszky, Gábor I. Csonka et al.

Physical Review Letters 2008 10.1103/physrevlett.100.136406

[46]

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set

G. Kresse, J. Furthmüller

Computational Materials Science 10.1016/0927-0256(96)00008-0

[47]

Density-functional thermochemistry. III. The role of exact exchange

Axel D. Becke

The Journal of Chemical Physics 10.1063/1.464913

[48]

"Special points for Brillouin-zone integrations"—a reply

James D. Pack, Hendrik J. Monkhorst

Physical Review B 10.1103/physrevb.16.1748

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Details

Published: Jul 03, 2018
Vol/Issue: 10(35)
Pages: 29741-29749

Authors

C

Can Cuhadar

School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea

S

Seul-Gi Kim

School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea

J

June-Mo Yang

School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea

J

Ja-Young Seo

School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea

D

Donghwa Lee

Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea

Funding

National Research Foundation of Korea Award: NRF-2012M3A6A7054861

Cite This Article

Can Cuhadar, Seul-Gi Kim, June-Mo Yang, et al. (2018). All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory. ACS Applied Materials & Interfaces, 10(35), 29741-29749. https://doi.org/10.1021/acsami.8b07103

All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory

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