Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot–Metal Oxide Semiconductor Heterojunctions

Kun Liang; Rui Wang; Bingbing Huo; Huihui Ren; Dingwei Li; Yan Wang; Yingjie Tang; Yitong Chen; Chunyan Song; Fanfan Li; Botao Ji; Hong Wang; Bowen Zhu

doi:10.1021/acsnano.2c00439

journal article Apr 22, 2022

Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot–Metal Oxide Semiconductor Heterojunctions

Kun Liang

Rui Wang

Bingbing Huo Huihui Ren Dingwei Li Yan Wang

Yingjie Tang

Yitong Chen

Chunyan Song Fanfan Li

Botao Ji

Hong Wang

Bowen Zhu

ACS Nano Vol. 16 No. 6 pp. 8651-8661 · American Chemical Society (ACS)

View at Publisher Save 10.1021/acsnano.2c00439

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References

Details

Published: Apr 22, 2022
Vol/Issue: 16(6)
Pages: 8651-8661
License: View

Authors

K

Kun Liang

College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China

R

Rui Wang

Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

B

Bingbing Huo

Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China; School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China

H

Huihui Ren

Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China; School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China

D

Dingwei Li

College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China

Y

Yan Wang

College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China

Y

Yingjie Tang

College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China

Y

Yitong Chen

Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China; School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China

C

Chunyan Song

Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China

F

Fanfan Li

Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China; Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

B

Botao Ji

Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China; Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China

H

Hong Wang

Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

B

Bowen Zhu

Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China; Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China

Funding

National Natural Science Foundation of China Award: 62174138

Westlake University Award: 103005772101

Multidisciplinary Research Initiative Center, Westlake University Award: MRIC20200101

Cite This Article

Kun Liang, Rui Wang, Bingbing Huo, et al. (2022). Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot–Metal Oxide Semiconductor Heterojunctions. ACS Nano, 16(6), 8651-8661. https://doi.org/10.1021/acsnano.2c00439

Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot–Metal Oxide Semiconductor Heterojunctions

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