High Electron Mobility in Solution-Cast and Vapor-Deposited Phenacyl−Quaterthiophene-Based Field-Effect Transistors:  Toward N-Type Polythiophenes

Joseph A. Letizia; Antonio Facchetti; Charlotte L. Stern; Mark A. Ratner; Tobin J. Marks

doi:10.1021/ja054276o

journal article Sep 03, 2005

High Electron Mobility in Solution-Cast and Vapor-Deposited Phenacyl−Quaterthiophene-Based Field-Effect Transistors: Toward N-Type Polythiophenes

Joseph A. Letizia Antonio Facchetti

Charlotte L. Stern

Mark A. Ratner

Tobin J. Marks

Journal of the American Chemical Society Vol. 127 No. 39 pp. 13476-13477 · American Chemical Society (ACS)

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Details

Published: Sep 03, 2005
Vol/Issue: 127(39)
Pages: 13476-13477

Authors

J

Joseph A. Letizia