Organic n-Channel Field-Effect Transistors Based on Arylenediimide-Thiophene Derivatives

Rocío Ponce Ortiz; Helena Herrera; Raúl Blanco; Hui Huang; Antonio Facchetti; Tobin J. Marks; Yan Zheng; José L. Segura

doi:10.1021/ja1018783

journal article Jun 02, 2010

Organic n-Channel Field-Effect Transistors Based on Arylenediimide-Thiophene Derivatives

Rocío Ponce Ortiz Helena Herrera Raúl Blanco Hui Huang

Journal of the American Chemical Society Vol. 132 No. 24 pp. 8440-8452 · American Chemical Society (ACS)

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Details

Published: Jun 02, 2010
Vol/Issue: 132(24)
Pages: 8440-8452

Authors

R

Rocío Ponce Ortiz

Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, Department of Physical Chemistry, University of Málaga, Malaga 29071, Spain, Department of Organic Chemistry, Complutense University of Madrid, Faculty of Chemistry, Madrid 28040, Spain, and Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077

H

Helena Herrera

Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, Department of Physical Chemistry, University of Málaga, Malaga 29071, Spain, Department of Organic Chemistry, Complutense University of Madrid, Faculty of Chemistry, Madrid 28040, Spain, and Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077

R

Raúl Blanco

Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, Department of Physical Chemistry, University of Málaga, Malaga 29071, Spain, Department of Organic Chemistry, Complutense University of Madrid, Faculty of Chemistry, Madrid 28040, Spain, and Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077

H

Hui Huang

Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, Department of Physical Chemistry, University of Málaga, Malaga 29071, Spain, Department of Organic Chemistry, Complutense University of Madrid, Faculty of Chemistry, Madrid 28040, Spain, and Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077

A

Antonio Facchetti

Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, Department of Physical Chemistry, University of Málaga, Malaga 29071, Spain, Department of Organic Chemistry, Complutense University of Madrid, Faculty of Chemistry, Madrid 28040, Spain, and Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077

T

Tobin J. Marks

Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, Department of Physical Chemistry, University of Málaga, Malaga 29071, Spain, Department of Organic Chemistry, Complutense University of Madrid, Faculty of Chemistry, Madrid 28040, Spain, and Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077

Y

Yan Zheng

Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, Department of Physical Chemistry, University of Málaga, Malaga 29071, Spain, Department of Organic Chemistry, Complutense University of Madrid, Faculty of Chemistry, Madrid 28040, Spain, and Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077

J

José L. Segura

Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, Department of Physical Chemistry, University of Málaga, Malaga 29071, Spain, Department of Organic Chemistry, Complutense University of Madrid, Faculty of Chemistry, Madrid 28040, Spain, and Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077

Cite This Article

Rocío Ponce Ortiz, Helena Herrera, Raúl Blanco, et al. (2010). Organic n-Channel Field-Effect Transistors Based on Arylenediimide-Thiophene Derivatives. Journal of the American Chemical Society, 132(24), 8440-8452. https://doi.org/10.1021/ja1018783

Organic n-Channel Field-Effect Transistors Based on Arylenediimide-Thiophene Derivatives

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