Porous Field-Effect Transistors Based on a Semiconductive Metal–Organic Framework

Guo‐Dong Wu; Jie Huang; Ying Zang; Jun He; Gang Xu

doi:10.1021/jacs.6b08511

journal article Nov 07, 2016

Porous Field-Effect Transistors Based on a Semiconductive Metal–Organic Framework

Guo‐Dong Wu Jie Huang

Ying Zang Jun He

Gang Xu

Journal of the American Chemical Society Vol. 139 No. 4 pp. 1360-1363 · American Chemical Society (ACS)

View at Publisher Save 10.1021/jacs.6b08511

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References

Details

Published: Nov 07, 2016
Vol/Issue: 139(4)
Pages: 1360-1363

Authors

G

Guo‐Dong Wu

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China

J

Jie Huang

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China; School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, Guangdong 510006, China

Y

Ying Zang

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China

J

Jun He

School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou, Guangdong 510006, China

G

Gang Xu

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China

Funding

National Natural Science Foundation of China Award: 51402293

Chinese Academy of Sciences Award: XDB20000000

Natural Science Foundation of Fujian Province Award: 2016J06006

Cite This Article

Guo‐Dong Wu, Jie Huang, Ying Zang, et al. (2016). Porous Field-Effect Transistors Based on a Semiconductive Metal–Organic Framework. Journal of the American Chemical Society, 139(4), 1360-1363. https://doi.org/10.1021/jacs.6b08511

Porous Field-Effect Transistors Based on a Semiconductive Metal–Organic Framework

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