MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

Hee Sung Lee; Sung-Wook Min; Youn-Gyung Chang; Min Kyu Park; Taewook Nam; Hyungjun Kim; Jae Hoon Kim; Sunmin Ryu; Seongil Im

doi:10.1021/nl301485q

journal article Jun 13, 2012

MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

Hee Sung Lee Sung-Wook Min Youn-Gyung Chang Min Kyu Park Taewook Nam

Hyungjun Kim

Jae Hoon Kim

Sunmin Ryu Seongil Im

Nano Letters Vol. 12 No. 7 pp. 3695-3700 · American Chemical Society (ACS)

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Details

Published: Jun 13, 2012
Vol/Issue: 12(7)
Pages: 3695-3700

Authors

Department of Applied Chemistry, Kyung Hee University, Yongin, Gyeonggi 446-701, Korea

Materials and Process Simulation Center (MC 139-74), California Institute of Technology, Pasadena, California 91125, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, Division of Chemistry and Chemical Engineering (MC 127-72), California Institute of Technology, Pasadena, California 91125, Department of Chemistry and Biochemistry, University of California, Los Angeles, California, 90095-1569, and Department of Chemistry, Northwestern University,...

Department of Applied Chemistry, Kyung Hee University, Yongin, Gyeonggi 446-701, Korea

S

Seongil Im

Cite This Article

Hee Sung Lee, Sung-Wook Min, Youn-Gyung Chang, et al. (2012). MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap. Nano Letters, 12(7), 3695-3700. https://doi.org/10.1021/nl301485q

MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

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