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References
38
[1]
Helveg S. Phys. Rev. Lett. (2000) 10.1103/physrevlett.84.951
[2]
Liu L. IEEE Trans. Electron Devices (2011) 10.1109/ted.2011.2159221
[3]
Yoon Y. Nano Lett. (2011) 10.1021/nl2018178
[4]
Street R. A. Adv. Mater. (2009) 10.1002/adma.200803211
[5]
Forrest S. R. Nature (2004) 10.1038/nature02498
[6]
Dimitrakopoulos C. D. IBM J. Res. Dev. (2001) 10.1147/rd.451.0011
[7]
Wang H. IEEE Electron Device Lett. (2009) 10.1109/led.2009.2016443
[8]
Wang H. IEEE Electron Device Lett. (2010) 10.1109/led.2010.2052017
[9]
Lin Y.-M. Science (2011) 10.1126/science.1204428
[10]
Mak K. F. Phys. Rev. Lett. (2010) 10.1103/physrevlett.105.136805
[11]
Splendiani A. Nano Lett. (2010) 10.1021/nl903868w
[12]
Wang J. IEEE Tech. Dig. IEDM (2002)
[13]
Ayari A. J. Appl. Phys. (2007) 10.1063/1.2407388
[14]
Radisavljevic B. Nat. Nanotechnol. (2011) 10.1038/nnano.2010.279
[15]
Liu H. IEEE Electron Device Lett. (2012) 10.1109/led.2012.2184520
[16]
Li H. Small (2012) 10.1002/smll.201101016
[17]
Yin Z. ACS Nano (2012) 10.1021/nn2024557
[18]
Radisavljevic B. ACS Nano (2011) 10.1021/nn203715c
[19]
Coehoorn R. Phys. Rev. B (1987) 10.1103/physrevb.35.6195
[20]
Tenne R. Nature (1992) 10.1038/360444a0
[21]
Spalvins T. J. Vac. Sci. Technol., A (1987) 10.1116/1.574106
[22]
Novoselov K. S. Proc. Natl. Acad. Sci. U.S.A. (2005) 10.1073/pnas.0502848102
[23]
Lee Y.-H. Adv. Mater. (2012) 10.1002/adma.201104798
[24]
Zhan Y. Small (2012) 10.1002/smll.201102654
[25]
Choi Y.-K. Tech. Digest. – Int. Electron Devices Meet. (1999)
[26]
Bae S. Nat. Nanotechnol. (2010) 10.1038/nnano.2010.132
[27]
Karl N. Synth. Met. (2003) 10.1016/s0379-6779(02)00398-3
[28]
Ayers J. E. (2004)
[29]
Lee C. ACS Nano (2010) 10.1021/nn1003937
[30]
Kuroda S. Tech. Digest. – Int. Electron Devices Meet. (1992) 10.1109/iedm.1992.307370
[31]
Chen W.-K. (2003) 10.1201/9780203008812
[32]
Michaelson H. B. J. Appl. Phys. (1977) 10.1063/1.323539
[33]
Tsividis Y. (2010)
[34]
Sun D. Nat. Nanotechnol. (2011) 10.1038/nnano.2011.1
[35]
Fix W. Appl. Phys. Lett. (2002) 10.1063/1.1501450
[36]
Chen Z. Science (2006) 10.1126/science.1122797
[37]
Kim D.-H. IEEE Electron Device Lett. (2008) 10.1109/led.2007.910770
[38]
Gu D. Appl. Phys. Lett. (2006) 10.1063/1.2336718
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Metrics
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Citations
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Details
Published
Aug 10, 2012
Vol/Issue
12(9)
Pages
4674-4680
Authors
Cite This Article
Haitao Wang, Lili Yu, Yi-Hsien Lee, et al. (2012). Integrated Circuits Based on Bilayer MoS2 Transistors. Nano Letters, 12(9), 4674-4680. https://doi.org/10.1021/nl302015v
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