NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

Jong Yeog Son; Young-Han Shin; Hyungjun Kim; Hyun M. Jang

doi:10.1021/nn100234x

journal article May 03, 2010

NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

Jong Yeog Son Young-Han Shin

Hyungjun Kim

Hyun M. Jang

ACS Nano Vol. 4 No. 5 pp. 2655-2658 · American Chemical Society (ACS)

View at Publisher Save 10.1021/nn100234x

Topics

No keywords indexed for this article. Browse by subject →

References

34

[1]

Beck A. Appl. Phys. Lett. (2000) 10.1063/1.126902

[2]

Collier C. P. Science (2000) 10.1126/science.289.5482.1172

[3]

Watanabe Y. Appl. Phys. Lett. (2001) 10.1063/1.1377617

[4]

Ouyang J. Nat. Mater. (2004) 10.1038/nmat1269

[5]

Green J. E. Nature (2007) 10.1038/nature05462

[6]

Lee M.-J. Adv. Mater. (2007) 10.1002/adma.200601025

[7]

Bez R. Microelectron. Eng. (2005) 10.1016/j.mee.2005.04.076

[8]

Okhonin S. IEEE Electron Device Lett. (2002) 10.1109/55.981314

[9]

Asamitsu A. Nature (1997) 10.1038/40363

[10]

Mane R. S. Mater. Chem. Phys. (2000) 10.1016/s0254-0584(00)00217-0

[11]

Szot K. Nat. Mater. (2006) 10.1038/nmat1614

[12]

Muenstermann R. Appl. Phys. Lett. (2008) 10.1063/1.2959074

[13]

Son J. Y. Appl. Phys. Lett. (2008) 10.1063/1.2897306

[14]

Schindler C. Appl. Phys. Lett. (2008) 10.1063/1.2903707

[15]

Guan W. Appl. Phys. Lett. (2008) 10.1063/1.3039079

[16]

Chang W.-Y. Appl. Phys. Lett. (2008) 10.1063/1.2834852

[17]

Park J.-W. J. Vac. Sci. Technol., B (2006) 10.1116/1.2244540

[18]

Teichert C. Phys. Rep. (2002) 10.1016/s0370-1573(02)00009-1

[19]

Self-forming nanoscale devices

Lars Samuelson

Materials Today 2003 10.1016/s1369-7021(03)01026-5

[20]

One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications

Y. Xia, P. Yang, Y. Sun et al.

Advanced Materials 2003 10.1002/adma.200390087

[21]

Barth J. V. Nature (2005) 10.1038/nature04166

[22]

Nicewarner-Pena S. R. Science (2001) 10.1126/science.294.5540.137

[23]

Lee W. Nat. Mater. (2006) 10.1038/nmat1717

[24]

Shingubara S. J. Nanopart. Res. (2003) 10.1023/a:1024479827507

[25]

Two-dimensional gas of massless Dirac fermions in graphene

K. S. Novoselov, A. K. Geim, S. V. Morozov et al.

Nature 2005 10.1038/nature04233

[26]

Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

Xiaolin Li, Xinran Wang, Li Zhang et al.

Science 2008 10.1126/science.1150878

[27]

Large-scale pattern growth of graphene films for stretchable transparent electrodes

Yue Zhao, Houk Jang, Sang Yoon Lee et al.

Nature 2009 10.1038/nature07719

[28]

Atomic Control of the SrTiO 3 Crystal Surface

Masashi Kawasaki, Kazuhiro Takahashi, Tatsuro Maeda et al.

Science 1994 10.1126/science.266.5190.1540

[29]

Raman Spectrum of Graphene and Graphene Layers

A. C. Ferrari, J. C. Meyer, V. Scardaci et al.

Physical Review Letters 2006 10.1103/physrevlett.97.187401

[30]

First Principles Study of Work Functions of Single Wall Carbon Nanotubes

Bin Shan, Kyeongjae Cho

Physical Review Letters 2005 10.1103/physrevlett.94.236602

[31]

Nagaraj B. J. Electroceram. (2002) 10.1023/a:1020806402413

[32]

Seo S. Appl. Phys. Lett. (2005) 10.1063/1.2150580

[33]

Structural engineering of nanoporous anodic aluminium oxide by pulse anodization of aluminium

Woo Lee, Kathrin Schwirn, Martin Steinhart et al.

Nature Nanotechnology 2008 10.1038/nnano.2008.54

[34]

Son J. Y. Appl. Phys. Lett. (2008) 10.1063/1.2931087

Metrics

175

Citations

34

References

Details

Published: May 03, 2010
Vol/Issue: 4(5)
Pages: 2655-2658

Authors

J

Jong Yeog Son

Department of Materials Science and Engineering, and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea

Y

Young-Han Shin

Department of Physics, University of Ulsan, Ulsan 680-749, Korea

H

Hyungjun Kim

School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea

H

Hyun M. Jang

Department of Materials Science and Engineering, and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea; Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea

Cite This Article

Jong Yeog Son, Young-Han Shin, Hyungjun Kim, et al. (2010). NiO Resistive Random Access Memory Nanocapacitor Array on Graphene. ACS Nano, 4(5), 2655-2658. https://doi.org/10.1021/nn100234x

NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

You May Also Like