journal article Dec 05, 2016

Oxygen vacancies enhance pseudocapacitive charge storage properties of MoO3−x

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Cited By
2,075
Chemical Engineering Journal
The Innovation
Journal of Materials Chemistry C
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2,075
Citations
53
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Published
Dec 05, 2016
Vol/Issue
16(4)
Pages
454-460
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Cite This Article
Hyung-Seok Kim, John B. Cook, Hao Lin, et al. (2016). Oxygen vacancies enhance pseudocapacitive charge storage properties of MoO3−x. Nature Materials, 16(4), 454-460. https://doi.org/10.1038/nmat4810
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