Bulk rectification effect in a polar semiconductor

T. Ideue; K. Hamamoto; S. Koshikawa; M. Ezawa; S. Shimizu; Y. Kaneko; Y. Tokura; N. Nagaosa; Y. Iwasa

doi:10.1038/nphys4056

journal article Mar 06, 2017

Bulk rectification effect in a polar semiconductor

T. Ideue K. Hamamoto S. Koshikawa M. Ezawa S. Shimizu

Y. Kaneko Y. Tokura N. Nagaosa Y. Iwasa

Nature Physics Vol. 13 No. 6 pp. 578-583 · Springer Science and Business Media LLC

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Details

Published: Mar 06, 2017
Vol/Issue: 13(6)
Pages: 578-583
License: View

Authors

T

T. Ideue

Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan.

High Energy Accelerator Research Organization

Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan.; Cross-Correlated Materials Research Group and Correlated Electron Research Group, Advanced Science Institute, RIKEN, Wako 351-0198, Japan.

Y

Y. Iwasa

Cite This Article

T. Ideue, K. Hamamoto, S. Koshikawa, et al. (2017). Bulk rectification effect in a polar semiconductor. Nature Physics, 13(6), 578-583. https://doi.org/10.1038/nphys4056

Bulk rectification effect in a polar semiconductor

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