Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

Jin-Suk Seo; Jun-Hyuck Jeon; Young Hwan Hwang; Hyungjin Park; Minki Ryu; Sang-Hee Ko Park; Byeong-Soo Bae

doi:10.1038/srep02085

journal article Open Access Jun 27, 2013

Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

Jin-Suk Seo Jun-Hyuck Jeon Young Hwan Hwang Hyungjin Park Minki Ryu Sang-Hee Ko Park

Byeong-Soo Bae

Scientific Reports Vol. 3 No. 1 · Springer Science and Business Media LLC

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Published: Jun 27, 2013
Vol/Issue: 3(1)
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Authors

Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

B

Byeong-Soo Bae

Cite This Article

Jin-Suk Seo, Jun-Hyuck Jeon, Young Hwan Hwang, et al. (2013). Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature. Scientific Reports, 3(1). https://doi.org/10.1038/srep02085

Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

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