Structural origin of light emission in germanium quantum dots

W. Little; A. Karatutlu; D. Bolmatov; K. Trachenko; A. V. Sapelkin; G. Cibin; R. Taylor; F. Mosselmans; A. J. Dent; G. Mountjoy

doi:10.1038/srep07372

journal article Open Access Dec 09, 2014

Structural origin of light emission in germanium quantum dots

W. Little A. Karatutlu D. Bolmatov K. Trachenko A. V. Sapelkin G. Cibin R. Taylor

F. Mosselmans A. J. Dent G. Mountjoy

Scientific Reports Vol. 4 No. 1 · Springer Science and Business Media LLC

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References

37

[1]

Alivisatos, A. P., Harris, A. L., Levinos, A. J., Steigerwald, M. L. & Brus, L. E. Electronic states of semiconductor clusters - homogeneous and inhomogeneous broadening of the optical-spectrum. J. Chem. Phys. 89, 4001–4011 (1988). 10.1063/1.454833

[2]

Brus, L. E. A simple model for the ionization potential, electron affinity and aqueous redox potentials of small semiconductor crystallites. J. Chem. Phys. 79, 5566–5571 (1983). 10.1063/1.445676

[3]

Canham, L. T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl. Phys. Lett. 57, 1046–1048 (1990). 10.1063/1.103561

[4]

Prokes, S. M. Light emission in thermally oxidized porous silicon: Evidence for oxide-related luminescence. Appl. Phys. Lett. 62, 3244–3246 (1993). 10.1063/1.109087

[5]

Brandt, M. S., Fuchs, H. D., Stutzmann, M., Weber, J. & Cardona, M. The origin of visible luminescence from porous silicon: A new interpretation. Solid State Commun. 81, 307–312 (1992). 10.1016/0038-1098(92)90815-q

[6]

Daldosso, N. et al. Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in sio2 . Phys. Rev. B 68, 085327 (2003). 10.1103/physrevb.68.085327

[7]

Sychugov, I., Juhasz, R., Valenta, J. & Linnros, J. Narrow luminescence linewidth of a silicon quantum dot. Phys. Rev. Lett. 94, 087405 (2005). 10.1103/physrevlett.94.087405

[8]

Godefroo, S. et al. Classification and control of the origin of photoluminescence from si nanocrystals. Nature Nanotechnology 3, 174–178 (2008). 10.1038/nnano.2008.7

[9]

Hannah, D. C. et al. On the origin of photoluminescence in silicon nanocrystals: Pressure-dependent structural and optical studies. Nano Letters 12, 4200–4205 (2012). 10.1021/nl301787g

[10]

Vaughn, D. D. & Schaak, R. E. Synthesis, properties and applications of colloidal germanium and germanium-based nanomaterials. Chem. Soc. Rev. 42, 2861–2879 (2013). 10.1039/c2cs35364d

[11]

Hinds, S. et al. Nir-emitting colloidal quantum dots having 26% luminescence quantum yield in buffer solution. J. Am. Chem. Soc. 129, 7218–7219 (2007). 10.1021/ja070525s

[12]

Zacharias, M. & Fauchet, P. M. Blue luminescence in films containing ge and geo2 nanocrystals: The role of defects. Appl. Phys. Lett. 71, 380–382 (1997). 10.1063/1.119543

[13]

Kartopu, G. et al. Can chemically etched germanium or germanium nanocrystals emit visible photoluminescence? Phys. Status Solidi A 202, 1472–1476 (2005). 10.1002/pssa.200461140

[14]

Araujo, L. L., Kluth, P., de, M. Azevedo, G. & Ridgway, M. C. Vibrational properties of ge nanocrystals determined by exafs. Phys. Rev. B 74, 184102 (2006). 10.1103/physrevb.74.184102

[15]

Backman, M. et al. Amorphization of ge and si nanocrystals embedded in amorphous sio2 by ion irradiation. Phys. Rev. B 80, 144109 (1988). 10.1103/physrevb.80.144109

[16]

Pizzagalli, L., Galli, G., Klepeis, J. E. & Gygi, F. Structure and stability of germanium nanoparticles. Phys. Rev. B 63, 165324 (2001). 10.1103/physrevb.63.165324

[17]

Kartopu, G. et al. On the origin of the 2.2–2.3 ev photoluminescence from chemically etched germanium. J. Luminescence 101, 275–283 (2003). 10.1016/s0022-2313(02)00570-7

[18]

Kartopu, G., Sapelkin, A. V., Karavanskii, V. A., Serincan, U. & Turan, R. Structural and optical properties of porous nanocrystalline ge. J. Appl. Phys. 103, 113518 (2008). 10.1063/1.2924417

[19]

Pettifer, R. F. et al. X-ray excited optical luminescence (xeol) study of porous silicon. Physica B 208 & 209, 484–486 (1995). 10.1016/0921-4526(94)00868-v

[20]

Dalba, G., Fornasini, P., Grisenti, R., Daldosso, N. & Rocca, F. On the sensitivity of the x-ray excited optical luminescence to the local structure of the luminescent si sites of porous silicon. Appl. Phys. Lett. 74, 1454–1456 (1999). 10.1063/1.123579

[21]

Emura, S. et al. Optical-luminescence yield spectra produced by x-ray excitation. Phys. Rev. B 47, 6918–6930 (1993). 10.1103/physrevb.47.6918

[22]

Goulon, J., Tola, P., Lemonnier, M. & Dexper-Ghys, J. On a site-selective exafs experiment using optical emission. Chem. Phys. 78, 347–356 (1983). 10.1016/0301-0104(83)85121-0

[23]

Henderson, E. J., Seino, M., Puzzo, D. P. & Ozin, G. A. Colloidally stable germanium nanocrystals for photonic applications. ACS Nano 4, 7683–7691 (2010). 10.1021/nn102521k

[24]

Campbell, I. H. & Fauchet, P. M. The effects of microcrystal size and shape on the one phonon raman spectra of crystalline semiconductors. Solid State Commun. 58, 739–741 (1986). 10.1016/0038-1098(86)90513-2

[25]

Sapelkin, A. V. & Bayliss, S. C. Distance dependence of mean-square relative displacements in exafs. Phys. Rev. B 65, 172104 (2002). 10.1103/physrevb.65.172104

[26]

Williamson, A. J. et al. Probing the electronic density of states of germanium nanoparticles: A method for determining atomic structure. Nano Letters 4, 1041–1045 (2004). 10.1021/nl049654m

[27]

Pettifer, R. & Bourdillon, A. Site-selective exafs via optical de-excitation. J. Phys. C 20, 329–335 (1987). 10.1088/0022-3719/20/2/015

[28]

Stern, E. A. Number of relevant independent points in x-ray-absorption fine-structure spectra. Phys. Rev. B 48, 9825–9827 (1993). 10.1103/physrevb.48.9825

[29]

Tanuma, S., Powell, C. J. & Penn, D. R. Calculations of electron inelastic mean free paths. Surf. Interface Anal. 36, 1–14 (1997).

[30]

Mott, N. F. & Davis, E. A. Electronic Processes in Non-Crystalline Materials (Oxford University Press, 2012).

[31]

Erbil, A., Cargill, G. S., Frahm, R. & Boehme, R. F. Total-electron-yield current measurements for near-surface extended x-ray-absorption fine structure. Phys. Rev. B 37, 2450–2464 (1988). 10.1103/physrevb.37.2450

[32]

Tenderholt, A., Hedman, B. & Hodgson, K. O. Pyspline: A modern, cross-platform program for the processing of raw averaged xas edge and exafs data. AIP Conf. Proc. 882, 105–107 (2006). 10.1063/1.2644442

[33]

Tomić, S. et al. New tools for the analysis of exafs: The dl excurv package. Report DL-TR-2005-001, Council for the Central Laboratory of the Research Councils. (2004).

[34]

Rehr, J. & Albers, R. Theoretical approaches to x-ray absorption fine structure. Rev. Mod. Phys. 72, 621–654 (2000). 10.1103/revmodphys.72.621

[35]

Lytle, F. W., Sayers, D. F. & Stern, E. A. Report of the international workshop on standards and criteria in x-ray absorption spectroscopy. Physica B 158, 701–722 (1989). 10.1016/0921-4526(89)90351-7

[36]

DL_POLY_3: new dimensions in molecular dynamics simulations via massive parallelism

Ilian T. Todorov, William Smith, Kostya Trachenko et al.

Journal of Materials Chemistry 2006 10.1039/b517931a

[37]

Tersoff, J. Modeling solid-state chemistry: Interatomic potentials for multicomponent systems. Phys. Rev. B 39, 5566–5568 (1989). 10.1103/physrevb.39.5566

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Published: Dec 09, 2014
Vol/Issue: 4(1)
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Cite This Article

W. Little, A. Karatutlu, D. Bolmatov, et al. (2014). Structural origin of light emission in germanium quantum dots. Scientific Reports, 4(1). https://doi.org/10.1038/srep07372

Structural origin of light emission in germanium quantum dots

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