Beyond EUV lithography: a comparative study of efficient photoresists' performance

Nassir Mojarad; Jens Gobrecht; Yasin Ekinci

doi:10.1038/srep09235

journal article Open Access Mar 18, 2015

Beyond EUV lithography: a comparative study of efficient photoresists' performance

Nassir Mojarad Jens Gobrecht Yasin Ekinci

Scientific Reports Vol. 5 No. 1 · Springer Science and Business Media LLC

View at Publisher Save 10.1038/srep09235

Abstract

AbstractExtreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within the next decade. Should photon-based lithography still be used for patterning smaller feature sizes, beyond EUV (BEUV) lithography at 6.x nm wavelength is an option that could potentially meet the rigid demands of the semiconductor industry. We demonstrate simultaneous characterization of the resolution, line-edge roughness and sensitivity of distinct photoresists at BEUV and compare their properties when exposed to EUV under the same conditions. By using interference lithography at these wavelengths, we show the possibility for patterning beyond 22 nm resolution and characterize the impact of using higher energy photons on the line-edge roughness and exposure latitude. We observe high sensitivity of the photoresist performance on its chemical content and compare their overall performance using the Z-parameter criterion. Interestingly, inorganic photoresists have much better performance at BEUV, while organic chemically-amplified photoresists would need serious adaptations for being used at such wavelength. Our results have immediate implications for deeper understanding of the radiation chemistry of novel photoresists at the EUV and soft X-ray spectra.

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References

35

[1]

Tallents, G., Wagenaars, E. & Pert, G. Optical Lithography at EUV Wavelengths. Nat Photonics 4, 809–811, 10.1038/Nphoton.2010.277 (2010). 10.1038/nphoton.2010.277

[2]

Wagner, C. & Harned, N. EUV Lithography Lithography Gets Extreme. Nat Photonics 4, 24–26, 10.1038/nphoton.2009.251 (2010). 10.1038/nphoton.2009.251

[3]

Oda, S. & Ferry, D. Silicon nanoelectronics. (Taylor and Francis, Boca Raton USA, 2006).

[4]

Peeters, R. et al. ASML's NXE platform performance and volume introduction. Proc SPIE 8679 10.1117/12.2010932 (2013). 10.1117/12.2010932

[5]

Willson, C. G. & Roman, B. J. The future of lithography: SEMATECH Litho Forum 2008. ACS Nano 2, 1323–1328, 10.1021/Nn800410c (2008). 10.1021/nn800410c

[6]

Heuberger, A. X-Ray-Lithography. J Vac Sci Technol B 6, 107–121, 10.1116/1.584026 (1988). 10.1116/1.584026

[7]

EUV Litho, Inc., http://www.euvlitho.com (2010) (Date of access: 01/09/2014).

[8]

Attwood, D. T. Soft x-rays and extreme ultraviolet radiation: principles and applications. (Cambridge university press, Cambridge England, 2000). 10.1017/cbo9781139164429

[9]

O'Sullivan, G. et al. Recent progress in source development for lithography at 6.x nm. Phys Scripta T156, 10.1088/0031-8949/2013/T156/014105 (2013). 10.1088/0031-8949/2013/t156/014105

[10]

Chkhalo, N. I. et al. High performance La/B4C multilayer mirrors with barrier layers for the next generation lithography. Appl Phys Lett 102, 10.1063/1.4774298 (2013). 10.1063/1.4774298

[11]

Makhotkin, I. A. et al. Spectral properties of La/B - based multilayer mirrors near the boron K absorption edge. Opt Express 20, 11778–11786, 10.1364/OE.20.011778 (2012). 10.1364/oe.20.011778

[12]

Medvedev, V. V. et al. Multilayer mirror with enhanced spectral selectivity for the next generation extreme ultraviolet lithography. Appl Phys Lett 103, 10.1063/1.4837335 (2013). 10.1063/1.4837335

[13]

Tsarfati, T., de Kruijs, R. W. E. V., Zoethout, E., Louis, E. & Bijkerk, F. Reflective multilayer optics for 6.7 nm wavelength radiation sources and next generation lithography. Thin Solid Films 518, 1365–1368, 10.1016/J.Tsf.2009.09.073 (2009). 10.1016/j.tsf.2009.09.073

[14]

Oyama, T. G., Oshima, A., Washio, M. & Tagawa, S. Evaluation of resist sensitivity in extreme ultraviolet/soft x-ray region for next-generation lithography. AIP Adv 1 10.1063/1.3665672 (2011). 10.1063/1.3665672

[15]

Oyama, T. G., Oshima, A., Washio, M. & Tagawa, S. Method of predicting resist sensitivity for 6.x nm extreme ultraviolet lithography. J Vac Sci Technol B 31, 10.1116/1.4813789 (2013). 10.1116/1.4813789

[16]

Anderson, C. et al. The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm. Extreme Ultraviolet (EUV) Lithography III 8322, 10.1117/12.917386 (2012). 10.1117/12.917386

[17]

Paivanranta, B., Langner, A., Kirk, E., David, C. & Ekinci, Y. Sub-10 nm patterning using EUV interference lithography. Nanotechnology 22, 10.1088/0957-4484/22/37/375302 (2011). 10.1088/0957-4484/22/37/375302

[18]

Solak, H. H. Space-invariant multiple-beam achromatic EUV interference lithography. Microelectron Eng 78, 410–416, 10.1016/j.mee.2005.01.012 (2005). 10.1016/j.mee.2005.01.012

[19]

Mojarad, N., Fan, D., Gobrecht, J. & Ekinci, Y. Broadband interference lithography at extreme ultraviolet and soft x-ray wavelengths. Opt Lett 39, 2286–2289, 10.1364/Ol.39.002286 (2014). 10.1364/ol.39.002286

[20]

Mojarad, N., Vockenhuber, M., Wang, L., Terhalle, B. & Ekinci, Y. Patterning at 6.5 nm wavelength using interference lithography. SPIE Advanced Lithography, 867924–867927, 10.1117/12.2011556 (2013). 10.1117/12.2011556

[21]

Van Steenwinckel, D., Gronheid, R., Van Roey, F., Willems, P. & Lammers, J. H. Novel method for characterizing resist performance. J Micro-Nanolith Mem 7, 10.1117/1.2909204 (2008). 10.1117/12.712861

[22]

Oleksak, R. P. et al. Chemical and Structural Investigation of High-Resolution Patterning with HafSOx. ACS Appl Mater Inter 6, 2924–2928, 10.1021/am405463u (2014). 10.1021/am405463u

[23]

Ekinci, Y., Vockenhuber, M., Mojarad, N. & Fan, D. EUV resists towards 11 nm half-pitch. SPIE Advanced Lithography, 904804–904810, 10.1117/12.2046459 (2014). 10.1117/12.2046459

[24]

Mojarad, N., Hojeij, M., Wang, L., Gobrecht, J. & Ekinci, Y. Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond. Nanoscale (Accepted Manuscript), 7, 4031–4037, 10.1039/C4NR07420C (2015). 10.1039/c4nr07420c

[25]

Grigorescu, A. E. & Hagen, C. W. Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art. Nanotechnology 20, 10.1088/0957-4484/20/29/292001 (2009). 10.1088/0957-4484/20/29/292001

[26]

Ekinci, Y., Vockenhuber, M., Hojeij, M., Wang, L. & Mojarad, N. M. Evaluation of EUV resist performance with interference lithography towards 11 nm half-pitch and beyond. SPIE Advanced Lithography, 867910-867910-867911, 10.1117/12.2011533 (2013). 10.1117/12.2011533

[27]

Gullikson, E. X-Ray Interactions With Matter, http://henke.lbl.gov/optical_constants (2010) (Date of access: 01/09/2014).

[28]

Bae, W. J. et al. High refractive index and high transparency HfO2 nanocomposites for next generation lithography. J Mater Chem 20, 5186–5189, 10.1039/C0jm00679c (2010). 10.1039/c0jm00679c

[29]

High resolution, high sensitivity inorganic resists

Jason Stowers, Douglas A. Keszler

Microelectronic Engineering 2009 10.1016/j.mee.2008.11.034

[30]

Kozawa, T. & Tagawa, S. Radiation Chemistry in Chemically Amplified Resists. Jpn J Appl Phys 49, 10.1143/Jjap.49.030001 (2010). 10.1143/jjap.49.030001

[31]

Brainard, R. L. et al. Shot noise, LER and quantum efficiency of EUV photoresists. Microlithography 2004, 74–85, 10.1117/12.536411 (2004). 10.1117/12.536411

[32]

Levinson, H. J. Principles of lithography. Vol. 146 (SPIE press, Bellingham USA, 2005). 10.1117/3.601520

[33]

George, S. A. et al. Extreme ultraviolet mask substrate surface roughness effects on lithographic patterning. J Vac Sci Technol B 28, C6e23–C26e30, 10.1116/1.3502436 (2010). 10.1116/1.3502436

[34]

Higgins, C. D. et al. Resolution, Line-Edge Roughness, Sensitivity Tradeoff and Quantum Yield of High Photo Acid Generator Resists for Extreme Ultraviolet Lithography. Jpn J Appl Phys 50, 10.1143/Jjap.50.036504 (2011). 10.1143/jjap.50.036504

[35]

Wallow, T. et al. Evaluation of EUV resist materials for use at the 32 nm half-pitch node. Proc SPIE 6921, 69211F, 10.1117/12.772943 (2008). 10.1117/12.772943

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Published: Mar 18, 2015
Vol/Issue: 5(1)
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Cite This Article

Nassir Mojarad, Jens Gobrecht, Yasin Ekinci (2015). Beyond EUV lithography: a comparative study of efficient photoresists' performance. Scientific Reports, 5(1). https://doi.org/10.1038/srep09235

Beyond EUV lithography: a comparative study of efficient photoresists' performance

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