High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

Charles Renard; Timothée Molière; Nikolay Cherkashin; José Alvarez; Laetitia Vincent; Alexandre Jaffré; Géraldine Hallais; James Patrick Connolly; Denis Mencaraglia; Daniel Bouchier

doi:10.1038/srep25328

journal article Open Access May 04, 2016

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

Charles Renard Timothée Molière Nikolay Cherkashin José Alvarez Laetitia Vincent Alexandre Jaffré Géraldine Hallais James Patrick Connolly Denis Mencaraglia Daniel Bouchier

Scientific Reports Vol. 6 No. 1 · Springer Science and Business Media LLC

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Abstract

AbstractInterest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial technique based on the epitaxial lateral overgrowth of micrometer scale GaAs crystals on a thin SiO2 layer from nanoscale Si seeds. This method permits the integration of high quality and defect-free crystalline GaAs on Si substrate and provides active GaAs/Si heterojunctions with efficient carrier transport through the thin SiO2 layer. The nucleation from small width openings avoids the emission of misfit dislocations and the formation of antiphase domains. With this method, we have experimentally demonstrated for the first time a monolithically integrated GaAs/Si diode with high current densities of 10 kA.cm−2 for a forward bias of 3.7 V. This epitaxial technique paves the way to hybrid III–V/Si devices that are free from lattice-matching restrictions, and where silicon not only behaves as a substrate but also as an active medium.

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Details

Published: May 04, 2016
Vol/Issue: 6(1)
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Authors

Institut Photovoltaïque d'Ile‐de‐France (IPVF) 30 RD 128 91120 Palaiseau France; Génie électrique et électronique de Paris (GeePs) UMR CNRS 8507; CentraleSupélec Univ. Paris‐Sud, Université Paris‐Saclay Sorbonne Universités UPMC Univ Paris 06, 11 rue Joliot Curie 91192 Gif‐sur‐Yvette France

James Patrick Connolly

Cite This Article

Charles Renard, Timothée Molière, Nikolay Cherkashin, et al. (2016). High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed. Scientific Reports, 6(1). https://doi.org/10.1038/srep25328

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed

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