Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

Sung Kyu Jang; Jiyoun Youn; Young Jae Song; Sungjoo Lee

doi:10.1038/srep30449

journal article Open Access Jul 26, 2016

Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

Sung Kyu Jang Jiyoun Youn Young Jae Song

Sungjoo Lee

Scientific Reports Vol. 6 No. 1 · Springer Science and Business Media LLC

View at Publisher Save 10.1038/srep30449

Abstract

AbstractTwo different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the CVD h-BN film depended significantly on the film growth mode and the resultant film quality.

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Published: Jul 26, 2016
Vol/Issue: 6(1)
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Cite This Article

Sung Kyu Jang, Jiyoun Youn, Young Jae Song, et al. (2016). Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric. Scientific Reports, 6(1). https://doi.org/10.1038/srep30449

Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

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