Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method

Yuan Tian; Lei Zhang; Yongzhong Wu; Yongliang Shao; Yuanbin Dai; Haodong Zhang; Rusheng Wei; Xiaopeng Hao

doi:10.1039/c3ce41404c

journal article Jan 01, 2014

Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method

Yuan Tian

Lei Zhang

Yongzhong Wu Yongliang Shao

Yuanbin Dai Haodong Zhang Rusheng Wei Xiaopeng Hao

CrystEngComm Vol. 16 No. 11 pp. 2317 · Royal Society of Chemistry (RSC)

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Details

Published: Jan 01, 2014
Vol/Issue: 16(11)
Pages: 2317

Authors

Northern Illinois University

Cite This Article

Yuan Tian, Lei Zhang, Yongzhong Wu, et al. (2014). Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method. CrystEngComm, 16(11), 2317. https://doi.org/10.1039/c3ce41404c

Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method

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