In situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide

Robert H. Temperton; Andrew Gibson; James N. O'Shea

doi:10.1039/c8cp06912c

journal article Jan 01, 2019

In situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide

Robert H. Temperton

Andrew Gibson James N. O'Shea

Physical Chemistry Chemical Physics Vol. 21 No. 3 pp. 1393-1398 · Royal Society of Chemistry (RSC)

View at Publisher Save 10.1039/c8cp06912c

Abstract

Ultra-thin aluminium oxide was grown on a rutile titanium dioxide surface by atomic layer deposition using trimethylaluminium and water precursors. XPS measurements were made during the growth process at near-ambient pressures.

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Citations

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References

Details

Published: Jan 01, 2019
Vol/Issue: 21(3)
Pages: 1393-1398
License: View

Authors

R

Robert H. Temperton

School of Physics; University of Nottingham; Nottingham; UK

A

Andrew Gibson

School of Physics; University of Nottingham; Nottingham; UK

J

James N. O'Shea

School of Physics; University of Nottingham; Nottingham; UK

Funding

Engineering and Physical Sciences Research Council

Innovate UK

Cite This Article

Robert H. Temperton, Andrew Gibson, James N. O'Shea (2019). In situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide. Physical Chemistry Chemical Physics, 21(3), 1393-1398. https://doi.org/10.1039/c8cp06912c

In situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide

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