Mottness collapse in monolayer 1T-TaSe2 with persisting charge density wave order

Kang Zhang; Chen Si; Chao-Sheng Lian; Jian Zhou

doi:10.1039/d0tc01719a

journal article Jan 01, 2020

Mottness collapse in monolayer 1T-TaSe2 with persisting charge density wave order

Kang Zhang

Chen Si

Chao-Sheng Lian Jian Zhou

Journal of Materials Chemistry C Vol. 8 No. 28 pp. 9742-9747 · Royal Society of Chemistry (RSC)

View at Publisher Save 10.1039/d0tc01719a

Abstract

Strain can induce a Mott insulator-to-metal transition in monolayer 1T-TaSe2 without breaking its long-range charge density wave order.

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Metrics

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Citations

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References

Details

Published: Jan 01, 2020
Vol/Issue: 8(28)
Pages: 9742-9747
License: View

Authors

K

Kang Zhang

School of Materials Science and Engineering; Beihang University; Beijing 100191; China

C

Chen Si

School of Materials Science and Engineering; Beihang University; Beijing 100191; China; Center for Integrated Computational Materials Engineering

C

Chao-Sheng Lian

International Laboratory for Quantum Functional Materials of Henan; School of Physics and Microelectronics; Zhengzhou University; Zhengzhou 450001; China

J

Jian Zhou

School of Materials Science and Engineering; Beihang University; Beijing 100191; China

Funding

National Natural Science Foundation of China Award: 11504015

National Basic Research Program of China Award: 2017YFB0701700

Cite This Article

Kang Zhang, Chen Si, Chao-Sheng Lian, et al. (2020). Mottness collapse in monolayer 1T-TaSe2 with persisting charge density wave order. Journal of Materials Chemistry C, 8(28), 9742-9747. https://doi.org/10.1039/d0tc01719a

Mottness collapse in monolayer 1T-TaSe2 with persisting charge density wave order

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