A 1T′-MoTe2/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication

Lenan Gao; Bangbang Yang; Junli Du; Cheng Zhang; Shihong Ma; Zhaowei Guo; Yan Wang; Jian Wang; Xinjian Li; Di Wu; Pei Lin

doi:10.1039/d4nr01366b

journal article Jan 01, 2024

A 1T′-MoTe2/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication

Lenan Gao Bangbang Yang

Junli Du Cheng Zhang

Shihong Ma Zhaowei Guo Yan Wang

Nanoscale Vol. 16 No. 25 pp. 12228-12236 · Royal Society of Chemistry (RSC)

View at Publisher Save 10.1039/d4nr01366b

Abstract

A mixed-dimensional 1T′-MoTe2/GaN vdW Schottky photodiode with excellent weak-light detection capability is fabricated, which can sense 360 nm signals as low as 3 nW and the light emission from a lighter with a pronounced on/off ratio of ∼2.

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Details

Published: Jan 01, 2024
Vol/Issue: 16(25)
Pages: 12228-12236
License: View

Authors

L

Lenan Gao

Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China

B

Bangbang Yang

Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China

J

Junli Du

State Grid Henan Electric Power Research Institute, Zhengzhou 450052, China

C

Cheng Zhang

National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials, School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China

S

Shihong Ma

Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China

Z

Zhaowei Guo

Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China

Y

Yan Wang

Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China

J

Jian Wang

Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China

X

Xinjian Li

Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China

D

Di Wu

Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China

P

Pei Lin

Key Laboratory of Materials Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China

Funding

National Natural Science Foundation of China Award: U22A20138

National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials Award: HKDNM2021012

Cite This Article

Lenan Gao, Bangbang Yang, Junli Du, et al. (2024). A 1T′-MoTe2/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication. Nanoscale, 16(25), 12228-12236. https://doi.org/10.1039/d4nr01366b

A 1T′-MoTe2/GaN van der Waals Schottky junction for self-powered UV imaging and optical communication

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