Experimental observation of microwave oscillationsproducedby pulsed silicon carbide IMPATT diode

K.V. Vassilevski; A.V. Zorenko; K. Zekentes

doi:10.1049/el:20010285

journal article Mar 29, 2001

Experimental observation of microwave oscillationsproducedby pulsed silicon carbide IMPATT diode

K.V. Vassilevski A.V. Zorenko K. Zekentes

Electronics Letters Vol. 37 No. 7 pp. 466-467 · Institution of Engineering and Technology (IET)

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References

7

[1]

Keyes Proc. Silicon Carbide Conf. (1973)

[2]

Carter (1999)

[3]

Vassilevski (2000)

[4]

Konstantinov (1998)

[5]

Experimental determination of electron drift velocity in 4H-SiC p/sup +/-n-n/sup +/ avalanche diodes

K.V. Vassilevski, K. Zekentes, A.V. Zorenko et al.

IEEE Electron Device Letters 2000 10.1109/55.870609

[6]

Vassilevski (2000)

[7]

Vassilevski (2001)

Metrics

22

Citations

7

References

Details

Published: Mar 29, 2001
Vol/Issue: 37(7)
Pages: 466-467

Authors

K

K.V. Vassilevski

Ioffe Institute, 26, Politechnicheskaya str., St. Petersburg, 194021, Russian Federation

A

A.V. Zorenko

State Scientific & Research Institute ‘Orion’, Kyiv, 03057, Ukraine

K

K. Zekentes

Microelectronics Research Group, FORTH, Heraklion, 711 10, Greece

Cite This Article

K.V. Vassilevski, A.V. Zorenko, K. Zekentes (2001). Experimental observation of microwave oscillationsproducedby pulsed silicon carbide IMPATT diode. Electronics Letters, 37(7), 466-467. https://doi.org/10.1049/el:20010285

Experimental observation of microwave oscillationsproducedby pulsed silicon carbide IMPATT diode

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