Room temperature InPSb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPE

A. Stein; A. Behres; D. Püttjer; K. Heime

doi:10.1049/ip-opt:19982302

journal article Oct 01, 1998

Room temperature InPSb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPE

A. Stein

A. Behres D. Püttjer K. Heime

IEE Proceedings - Optoelectronics Vol. 145 No. 5 pp. 257-260 · Institution of Engineering and Technology (IET)

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Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy

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Metrics

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Citations

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References

Details

Published: Oct 01, 1998
Vol/Issue: 145(5)
Pages: 257-260

Authors

Universität Mainz

Cite This Article

A. Stein, A. Behres, D. Püttjer, et al. (1998). Room temperature InPSb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPE. IEE Proceedings - Optoelectronics, 145(5), 257-260. https://doi.org/10.1049/ip-opt:19982302

Room temperature InPSb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPE

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