Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices

Yoshihito Maeda; Nobuo Tsukamoto; Yoshiaki Yazawa; Yoshihiko Kanemitsu; Yasuaki Masumoto

doi:10.1063/1.105773

journal article Dec 09, 1991

Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices

Yoshihito Maeda Nobuo Tsukamoto Yoshiaki Yazawa Yoshihiko Kanemitsu

Yasuaki Masumoto

Applied Physics Letters Vol. 59 No. 24 pp. 3168-3170 · AIP Publishing

View at Publisher Save 10.1063/1.105773

Abstract

Ge microcrystals embedded in SiO2 glassy matrices were formed by a radio-frequency magnetron cosputtering technique and then annealed at 800 °C for 30 min. The average radius of the Ge microcrystals in SiO2 was determined to be about 3 nm by means of Raman spectroscopy and high resolution electron microscope. The annealed sample showed a strong room temperature luminescence with a peak at 2.18 eV. This is consistent with quantum confinement of electrons and holes.

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Metrics

551

Citations

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References

Details

Published: Dec 09, 1991
Vol/Issue: 59(24)
Pages: 3168-3170

Authors

Y

Yoshihito Maeda

Hitachi Research Laboratory, Hitachi, Ltd., Hitachi 319-12, Japan

N

Nobuo Tsukamoto

Hitachi Research Laboratory, Hitachi, Ltd., Hitachi 319-12, Japan

Y

Yoshiaki Yazawa

Hitachi Research Laboratory, Hitachi, Ltd., Hitachi 319-12, Japan

Y

Yoshihiko Kanemitsu

Institute of Physics, University of Tsukuba, Tsukuba 305, Japan

Y

Yasuaki Masumoto

Institute of Physics, University of Tsukuba, Tsukuba 305, Japan

Cite This Article

Yoshihito Maeda, Nobuo Tsukamoto, Yoshiaki Yazawa, et al. (1991). Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices. Applied Physics Letters, 59(24), 3168-3170. https://doi.org/10.1063/1.105773

Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices

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