Gettering of copper to hydrogen-induced cavities in silicon

J. Wong-Leung; C. E. Ascheron; M. Petravic; R. G. Elliman; J. S. Williams

doi:10.1063/1.113246

journal article Mar 06, 1995

Gettering of copper to hydrogen-induced cavities in silicon

J. Wong-Leung C. E. Ascheron M. Petravic R. G. Elliman J. S. Williams

Applied Physics Letters Vol. 66 No. 10 pp. 1231-1233 · AIP Publishing

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Abstract

Hydrogen implantation and subsequent thermal annealing is found to result in a well-defined band of cavities in Si. This band is an extremely efficient gettering layer for Cu which is also introduced into the near surface of Si by ion implantation. Profiling of implanted Cu indicates that ∼95% of an initial 3×1015 cm−2 Cu implant is redistributed following annealing at a temperature of 780 °C from a near-surface damaged layer to a narrow band of cavities of width ∼1000 Å at a depth of ∼1 μm. Furthermore, the Si between the surface and the cavity band is essentially defect-free and that some cavities contain the bulk Cu3Si phase.

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References

18

[1]

[2]

"Appl. Phys. A" (1983)

[3]

"Solid State Technol." (1981)

[4]

"Appl. Phys. Lett." (1988)

[5]

"J. Appl. Phys." (1981)

[6]

"Mater. Res. Soc. Symp. Proc." (1990)

[7]

"Jpn. J. Appl. Phys." (1993)

[8]

"Mater. Res. Soc. Symp. Proc." (1993)

[9]

"Mater. Res. Soc. Symp. Proc." (1994)

[10]

"Nucl. Instrum. Methods" (1980)

[11]

[12]

"Phys. Rev. B" (1992)

[13]

"Appl. Phys. Lett." (1993)

[14]

"Appl. Phys. Lett." (1985)

[15]

"Appl. Phys. Lett." (1990)

[16]

"Bell Syst. Tech. J.," (1960)

[17]

[18]

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Strong segregation gettering of transition metals by implantation-formed cavities and boron-silicide precipitates in silicon

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Metrics

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Citations

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References

Details

Published: Mar 06, 1995
Vol/Issue: 66(10)
Pages: 1231-1233

Authors

J

J. Wong-Leung