Application of the thermionic field emission model in the study of a Schottky barrier of Ni on p-GaN from current–voltage measurements

Yow-Jon Lin

doi:10.1063/1.1890476

journal article Mar 18, 2005

Application of the thermionic field emission model in the study of a Schottky barrier of Ni on p-GaN from current–voltage measurements

Yow-Jon Lin

Applied Physics Letters Vol. 86 No. 12 · AIP Publishing

View at Publisher Save 10.1063/1.1890476

Abstract

Barrier height values of Ni contacts to Mg-doped p-type GaN (p-GaN) were obtained from current–voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9eV obtained from x-ray photoelectron spectroscopy measurements.

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Details

Published: Mar 18, 2005
Vol/Issue: 86(12)

Authors

Y

Yow-Jon Lin

National Changhua University of Education Institute of Photonics, , Changhua 500, Taiwan, Republic of China

Cite This Article

Yow-Jon Lin (2005). Application of the thermionic field emission model in the study of a Schottky barrier of Ni on p-GaN from current–voltage measurements. Applied Physics Letters, 86(12). https://doi.org/10.1063/1.1890476

Application of the thermionic field emission model in the study of a Schottky barrier of Ni on p-GaN from current–voltage measurements

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