Chemical functionalization of GaN and AlN surfaces

B. Baur; G. Steinhoff; J. Hernando; O. Purrucker; M. Tanaka; B. Nickel; M. Stutzmann; M. Eickhoff

doi:10.1063/1.2150280

journal article Dec 22, 2005

Chemical functionalization of GaN and AlN surfaces

B. Baur G. Steinhoff J. Hernando

O. Purrucker M. Tanaka B. Nickel M. Stutzmann M. Eickhoff

Applied Physics Letters Vol. 87 No. 26 · AIP Publishing

View at Publisher Save 10.1063/1.2150280

Abstract

The covalent functionalization of GaN and AlN surfaces with organosilanes is demonstrated. Both octadecyltrimethoxysilane and aminopropyltriethoxysilane form self-assembled monolayers on hydroxylated GaN and AlN surfaces, confirmed by x-ray photoelectron spectroscopy and atomic force microscopy. The monolayer thickness on GaN was determined to 2.5±0.2nm by x-ray reflectivity. Temperature-programmed desorption measurements reveal a desorption enthalpy of 240kJ∕mol. The realization of micropatterned self-assembled monolayers and the hybridization of deoxyribonucleic acid molecules on biofunctionalized GaN surfaces are shown.

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References

Details

Published: Dec 22, 2005
Vol/Issue: 87(26)

Authors

B

B. Baur

Technical Universität München Walter Schottky Institute, , Am Coulombwall, D-85748 Garching, Germany

G

G. Steinhoff

Technical Universität München Walter Schottky Institute, , Am Coulombwall, D-85748 Garching, Germany

J

J. Hernando

Technical Universität München Walter Schottky Institute, , Am Coulombwall, D-85748 Garching, Germany

O

O. Purrucker

Technical Universität München Physik-Department E22, , James-Franck-Strasse, D-85748 Garching, Germany

M

M. Tanaka

Technical Universität München Physik-Department E22, , James-Franck-Strasse, D-85748 Garching, Germany

B

B. Nickel

Ludwig-Maximilians-University Department of Physics, , Geschwister-Scholl-Platz, D-80539 München, Germany

M

M. Stutzmann

Technical Universität München Walter Schottky Institute, , Am Coulombwall, D-85748 Garching, Germany

M

M. Eickhoff

Technical Universität München Walter Schottky Institute, , Am Coulombwall, D-85748 Garching, Germany

Cite This Article

B. Baur, G. Steinhoff, J. Hernando, et al. (2005). Chemical functionalization of GaN and AlN surfaces. Applied Physics Letters, 87(26). https://doi.org/10.1063/1.2150280

Chemical functionalization of GaN and AlN surfaces

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