Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors

G. Pennington; N. Goldsman; A. Akturk; A. E. Wickenden

doi:10.1063/1.2437127

journal article Feb 05, 2007

Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors

G. Pennington N. Goldsman A. Akturk A. E. Wickenden

Applied Physics Letters Vol. 90 No. 6 · AIP Publishing

View at Publisher Save 10.1063/1.2437127

Abstract

Theoretical calculations of carrier transport in semiconducting single-walled carbon nanotubes are compared with recent experiments. Considering carrier-phonon scattering, a deformation potential coupling constant of 14eV is determined. Theory predicts the low-field mobility, conductance, and on resistance of field-effect transistors as a function of nanotube diameter and temperature. When the device is in the on state, the mean free path (Lm-on) varies linearly with tube diameter and inversely with temperature. Intersubband scattering is found to strongly decrease Lm-on when a few subbands are occupied.

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References

27

[1]

IEEE Trans. Nanotechnol. (2002) 10.1109/tnano.2002.1005429

[2]

IEEE Trans. Nanotechnol. (2002) 10.1109/tnano.2002.807390

[3]

IEEE Trans. Electron Devices (2005) 10.1109/ted.2005.845148

[4]

Nano. Lett. (2004) 10.1021/nl034841q

[5]

Band Structure, Phonon Scattering, and the Performance Limit of Single-Walled Carbon Nanotube Transistors

Xinjian Zhou, Ji-Yong Park, Shaoming Huang et al.

Physical Review Letters 2005 10.1103/physrevlett.95.146805

[6]

Ballistic carbon nanotube field-effect transistors

Ali Javey, Jing Guo, Qian Wang et al.

Nature 2003 10.1038/nature01797

[7]

Phys. Rev. Lett. (2000) 10.1103/physrevlett.84.5002

[8]

Phys. Rev. Lett. (2005) 10.1103/physrevlett.95.155505

[9]

Phys. Rev. B (2002) 10.1103/physrevb.65.235412

[10]

Phys. Rev. B (2003) 10.1103/physrevb.68.045426

[11]

IEICE Trans. Electron. (2003)

[12]

J. Appl. Phys. (2005) 10.1063/1.1925763

[13]

Appl. Phys. Lett. (2005) 10.1063/1.1923183

[14]

Phys. Rev. B (2005) 10.1103/physrevb.71.205318

[15]

Phys. Rev. B (2005) 10.1103/physrevb.72.085430

[16]

Phys. Rev. Lett. (2005) 10.1103/physrevlett.94.086802

[17]

Phys. Rev. Lett. (2005) 10.1103/physrevlett.95.236802

[18]

Nano Lett. (2006) 10.1021/nl052044h

[19]

Phys. Rev. B (2006) 10.1103/physrevb.74.075415

[20]

(2000)

[21]

(1998)

[22]

Phys. Rev. Lett. (1998) 10.1103/physrevlett.81.2506

[23]

Phys. Rev. B (1999) 10.1103/physrevb.60.13874

[24]

Phys. Rev. Lett. (2000) 10.1103/physrevlett.85.154

[25]

Solid-State Electron. (1996) 10.1016/s0038-1101(96)00114-1

[26]

J. Appl. Phys. (1999) 10.1063/1.370754

[27]

Phys. Rev. B (1983) 10.1103/physrevb.28.2157

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Details

Published: Feb 05, 2007
Vol/Issue: 90(6)

Authors

G

G. Pennington

University of Maryland Department of Electrical Engineering, , College Park, Maryland 20742

N

N. Goldsman

University of Maryland Department of Electrical Engineering, , College Park, Maryland 20742

A

A. Akturk

University of Maryland Department of Electrical Engineering, , College Park, Maryland 20742

A

A. E. Wickenden

U.S. Army Research Laboratory , 2800 Powder Mill Road, Adelphi, Maryland 20783

Cite This Article

G. Pennington, N. Goldsman, A. Akturk, et al. (2007). Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors. Applied Physics Letters, 90(6). https://doi.org/10.1063/1.2437127

Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors

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