Organosilane-functionalized wide band gap semiconductor surfaces

R. M. Petoral; G. R. Yazdi; A. Lloyd Spetz; R. Yakimova; K. Uvdal

doi:10.1063/1.2745641

journal article May 28, 2007

Organosilane-functionalized wide band gap semiconductor surfaces

R. M. Petoral G. R. Yazdi A. Lloyd Spetz R. Yakimova K. Uvdal

Applied Physics Letters Vol. 90 No. 22 · AIP Publishing

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Abstract

Surface functionalization of wide band gap semiconductors, SiC, ZnO, and GaN, with organosilane is reported. Formation of self-assembled monolayers of mercaptopropyltrimethoxysilane is confirmed by x-ray photoelectron spectroscopy and atomic force microscopy. The molecules are adsorbed on the surfaces through the silane groups with the free thiol groups molecularly oriented away from the surface. Moreover, chemisorption via the thiolate is observed for the ZnO surface. Immobilization of a model biomolecule to the functionalized surface is demonstrated. An amino acid derivative, i.e., phosphotyrosine derived thiol, is linked on the functionalized ZnO and GaN surfaces via formation of disulfide bridges.

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Details

Published: May 28, 2007
Vol/Issue: 90(22)

Authors

R

R. M. Petoral