Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers

A. Lemaître; A. Miard; L. Travers; O. Mauguin; L. Largeau; C. Gourdon; V. Jeudy; M. Tran; J.-M. George

doi:10.1063/1.2963979

journal article Jul 14, 2008

Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers

A. Lemaître

A. Miard L. Travers O. Mauguin L. Largeau

C. Gourdon V. Jeudy M. Tran J.-M. George

Applied Physics Letters Vol. 93 No. 2 · AIP Publishing

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Abstract

A small fraction of phosphorus (up to 10%) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects strongly affect the domain wall propagation.

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Details

Published: Jul 14, 2008
Vol/Issue: 93(2)

Authors

A

A. Lemaître