Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors

O. Bethge; S. Abermann; C. Henkel; C. J. Straif; H. Hutter; J. Smoliner; E. Bertagnolli

doi:10.1063/1.3295698

journal article Feb 01, 2010

Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors

O. Bethge S. Abermann C. Henkel C. J. Straif H. Hutter J. Smoliner E. Bertagnolli

Applied Physics Letters Vol. 96 No. 5 · AIP Publishing

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Abstract

ZrO 2 / GeO 2 dielectrics are grown on germanium substrates by Atomic Layer Deposition (ALD) at substrate temperatures of 150, 200, and 250 °C, respectively. The impact of the deposition temperature on the electrical and structural properties of MOS capacitors is investigated. A significant influence of the ALD temperature on the high frequency capacitance in inversion can be observed, resulting in a shift of the minority carrier response time from 1.15 to 0.2 μs. Time-of-flight secondary ion mass spectroscopy investigations indicate a distinctive depletion of interfacial GeO at higher ALD temperatures, which give rise to trap levels near the oxide/Ge interface.

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Details

Published: Feb 01, 2010
Vol/Issue: 96(5)

Authors

O

O. Bethge

Vienna University of Technology 1 Institute of Solid State Electronics, , Vienna 1040, Austria

S

S. Abermann

Vienna University of Technology 1 Institute of Solid State Electronics, , Vienna 1040, Austria

C

C. Henkel

Vienna University of Technology 1 Institute of Solid State Electronics, , Vienna 1040, Austria

C

C. J. Straif

Vienna University of Technology 2 Institute of Chemical Technologies and Analytics, , Vienna 1060, Austria

H

H. Hutter

Vienna University of Technology 2 Institute of Chemical Technologies and Analytics, , Vienna 1060, Austria

J

J. Smoliner

Vienna University of Technology 1 Institute of Solid State Electronics, , Vienna 1040, Austria

E

E. Bertagnolli

Vienna University of Technology 1 Institute of Solid State Electronics, , Vienna 1040, Austria

Cite This Article

O. Bethge, S. Abermann, C. Henkel, et al. (2010). Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors. Applied Physics Letters, 96(5). https://doi.org/10.1063/1.3295698

Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors

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