journal article
May 05, 2014
Optical gain characteristics in Al-rich AlGaN/AlN quantum wells
Abstract
The optical gain characteristics of Al-rich AlGaN/AlN quantum wells (QWs) were assessed by the variable stripe length method at room temperature. An Al0.79Ga0.21N/AlN QW with a well width of 5 nm had a large optical gain of 140 cm−1. Increasing the excitation length induced a redshift due to the gain consumption and the consequent saturation of the amplified spontaneous emission. Moreover, a change in the dominant gain polarization with Al composition, which was attributed to switching of the valence band ordering of strained AlGaN/AlN QWs at Al compositions of ∼0.8, was experimentally demonstrated.
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Metrics
11
Citations
25
References
Details
- Published
- May 05, 2014
- Vol/Issue
- 104(18)
Authors
Cite This Article
Takao Oto, Ryan G. Banal, Mitsuru Funato, et al. (2014). Optical gain characteristics in Al-rich AlGaN/AlN quantum wells. Applied Physics Letters, 104(18). https://doi.org/10.1063/1.4875592
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