Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

T. Braun; C. Schneider; S. Maier; R. Igusa; S. Iwamoto; A. Forchel; S. Höfling; Y. Arakawa; M. Kamp

doi:10.1063/1.4896284

journal article Open Access Sep 01, 2014

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

T. Braun

C. Schneider

S. Maier

R. Igusa S. Iwamoto A. Forchel S. Höfling Y. Arakawa

M. Kamp

AIP Advances Vol. 4 No. 9 · AIP Publishing

View at Publisher Save 10.1063/1.4896284

Abstract

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

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References

Details

Published: Sep 01, 2014
Vol/Issue: 4(9)
License: View

Authors

T

T. Braun

Universität Würzburg 1 Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, , Am Hubland, D-97074, Würzburg, Germany

C

C. Schneider

Universität Würzburg 1 Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, , Am Hubland, D-97074, Würzburg, Germany

S

S. Maier

Universität Würzburg 1 Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, , Am Hubland, D-97074, Würzburg, Germany

R

R. Igusa

University of Tokyo 2 , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

S

S. Iwamoto

University of Tokyo 2 , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

A

A. Forchel

Universität Würzburg 1 Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, , Am Hubland, D-97074, Würzburg, Germany

S

S. Höfling

Universität Würzburg 1 Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, , Am Hubland, D-97074, Würzburg, Germany

Y

Y. Arakawa

University of Tokyo 2 , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

M

M. Kamp

Universität Würzburg 1 Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, , Am Hubland, D-97074, Würzburg, Germany

Funding

Deutsche Forschungsgemeinschaft Award: FO 146/14-1

Cite This Article

T. Braun, C. Schneider, S. Maier, et al. (2014). Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots. AIP Advances, 4(9). https://doi.org/10.1063/1.4896284

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

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