Gate-tunable quantum dot in a high quality single layer MoS2 van der Waals heterostructure

Riccardo Pisoni; Zijin Lei; Patrick Back; Marius Eich; Hiske Overweg; Kenji Watanabe; Takashi Taniguchi; Thomas Ihn; Klaus Ensslin

doi:10.1063/1.5021113

journal article Mar 19, 2018

Gate-tunable quantum dot in a high quality single layer MoS2 van der Waals heterostructure

Riccardo Pisoni Zijin Lei Patrick Back Marius Eich Hiske Overweg Kenji Watanabe

Takashi Taniguchi

Thomas Ihn Klaus Ensslin

Applied Physics Letters Vol. 112 No. 12 · AIP Publishing

View at Publisher Save 10.1063/1.5021113

Abstract

We have fabricated an encapsulated monolayer MoS2 device with metallic ohmic contacts through a pre-patterned hexagonal boron nitride (hBN) layer. In the bulk, we observe an electron mobility as high as 3000 cm2/Vs at a density of 7 × 1012 cm−2 at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of hBN, we are able to confine electrons in MoS2 and observe the Coulomb blockade effect. By tuning the middle gate voltage, we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.

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References

Details

Published: Mar 19, 2018
Vol/Issue: 112(12)

Authors

R

Riccardo Pisoni

Solid State Physics Laboratory, Department of Physics, ETH Zürich 1 , 8093 Zürich, Switzerland

Z

Zijin Lei

Solid State Physics Laboratory, Department of Physics, ETH Zürich 1 , 8093 Zürich, Switzerland

P

Patrick Back

Institute of Quantum Electronics, Department of Physics, ETH Zürich 2 , 8093 Zürich, Switzerland

M

Marius Eich

Solid State Physics Laboratory, Department of Physics, ETH Zürich 1 , 8093 Zürich, Switzerland

H

Hiske Overweg

Solid State Physics Laboratory, Department of Physics, ETH Zürich 1 , 8093 Zürich, Switzerland

K

Kenji Watanabe

National Institute for Material Science 3 , 1-1 Namiki, Tsukuba 305-0044, Japan

T

Takashi Taniguchi

National Institute for Material Science 3 , 1-1 Namiki, Tsukuba 305-0044, Japan

T

Thomas Ihn

Solid State Physics Laboratory, Department of Physics, ETH Zürich 1 , 8093 Zürich, Switzerland

K

Klaus Ensslin

Solid State Physics Laboratory, Department of Physics, ETH Zürich 1 , 8093 Zürich, Switzerland

Funding

National Center of Competence in Research Quantum Science and Technology

EU Spin-NANO RTN network

MEXT JSPS Award: JP15K21722

Cite This Article

Riccardo Pisoni, Zijin Lei, Patrick Back, et al. (2018). Gate-tunable quantum dot in a high quality single layer MoS2 van der Waals heterostructure. Applied Physics Letters, 112(12). https://doi.org/10.1063/1.5021113

Gate-tunable quantum dot in a high quality single layer MoS2 van der Waals heterostructure

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