journal article Open Access Apr 01, 1978

GaAs-GaAlAs injection lasers on semi-insulating substrates using laterally diffused junctions

Applied Physics Letters Vol. 32 No. 7 pp. 410-412 · AIP Publishing
Abstract
Low-threshold GaAs-GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi-insulating substrates and can be integrated with other components.
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References
9
[1]
Appl. Phys. Lett. (1977) 10.1063/1.89662
[2]
[3]
J. Appl. Phys. (1974) 10.1063/1.1663670
[4]
IEEE J. Quantum Electron. (1975)
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IEEE J. Quantum Electron. (1977)
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J. Appl. Phys. (1973) 10.1063/1.1662912
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Appl. Phys. Lett. (1976) 10.1063/1.88881
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Appl. Phys. Lett. (1977) 10.1063/1.89247
[9]
Cited By
31
IEEE Journal of Quantum Electronics
Metrics
31
Citations
9
References
Details
Published
Apr 01, 1978
Vol/Issue
32(7)
Pages
410-412
Cite This Article
C. P. Lee, S. Margalit, I. Ury, et al. (1978). GaAs-GaAlAs injection lasers on semi-insulating substrates using laterally diffused junctions. Applied Physics Letters, 32(7), 410-412. https://doi.org/10.1063/1.90087
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